Present Status of the Development and Application of Transparent Conductors Oxide Thin Solid Films

DOI: 10.4236/msa.2011.29167   PDF   HTML     747,136 Downloads   2,094,403 Views   Citations


Luis Castañeda’s article, "Present Status of the Development and Application of Transparent Conductors Oxide Thin Solid Films ", has been retraced by Ray Boxman because of plagiarism.

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L. Castañeda, "Present Status of the Development and Application of Transparent Conductors Oxide Thin Solid Films," Materials Sciences and Applications, Vol. 2 No. 9, 2011, pp. 1233-1242. doi: 10.4236/msa.2011.29167.

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The authors declare no conflicts of interest.


[1] K. B?deker, “über die elektrische Leitf?higkeit und die thermoelektrische Kraft einiger Schwermetallverbindun- gen,” Annalen Der Physik, Vol. 22, No. 4, March 1907, pp. 749-766.
[2] G. Haacke, “Transparent Conducting Coatings,” Annual Review of Materials Science, Vol. 7, August 1977, pp. 73-93. doi:10.1146/
[3] M. Hiramatsu, K. Imaeda, N. Horio and M. Nawata, “Transparent Conducting ZnO Thin Films Prepared by XeCl Excimer Laser Ablation,” Journal of Vacuum Science and Technology A, Vol. 16, No. 3, April 1998, pp. 669-673. doi:10.1116/1.581085
[4] B. G. Lewis and D. C. Paine, “Applications and Processing of Transparent Conducting Oxides,” Materials Research Bulletin, Vol. 25, August 2000, pp. 22-27.
[5] G. J. Exarhos and X. D. Zhou, “Discovery-Based Design of Transparent Conducting Oxide Films,” Thin Solid Films, Vol. 515, No. 18, June 2007, pp. 7025-7052. doi:10.1016/j.tsf.2007.03.014
[6] E. Fortunato, D. Ginley, H. Hosono, and D. C. Paine, “Transparent Conducting Oxides for Photovoltaics,” Materials Research Bulletin, Vol. 32, No. 3, March 2007, pp. 242-247.
[7] P. P. Edwards, A. Porch, M. O. Jones, D. V. Morgan and R. M. Perks, “Basic Materials Physics of Transparent Conducting Oxides,” Dalton Transactions, Vol. 19, No. 4, August 2004, pp. 2995-3002. doi:10.1039/b408864f
[8] H. Mizoguchi and P. M. Woodward, “Electronic Structure Studies of Main Group Oxides Possessing Edge- Sharing Octahedra: Implications for the Design of Transparent Conducting Oxides,” Chemistry of Materials, Vol. 16, No. 25, November 2004, pp. 5233-5248.
[9] D. C. Look and B. Claflin, “Progress in Compound Semiconductor Materials IV-Electronic and Optoelectronic Applications,” Materials Research Society Symposium Proceedings, Vol. 829, December 2005, pp. B8.6.1.
[10] C. G. Van de Walle, “Hydrogen as a Cause of Doping in Zinc Oxide,” Physical Review Letters, Vol. 85, 5, July 2000, pp. 1012-1015.
[11] C. Kili? and A. Zunger, “Observation of Solitary Elastic Surface Pulses,” Physical Review Letters, Vol. 88, October 2002, pp. 076104-2-076104-4.
[12] J. R. Bellingham, W. A. Phillips and C. J. Adkins, “Electrical and Optical Properties of Amorphous Indium Oxide,” Journal of Physical: Condensed Matter, Vol. 2, No. 28, July 1990, pp. 6207-6209.
[13] K. Elmer, “Resistivity of Polycrystalline Zinc Oxide Films: Current Status and Physical Limit,” Applied Physics, Vol. 34, No. 21, November 2001, p. 3097.
[14] G. Frank and H. K?stlin, “Electrical Properties and Defect Model of Tin-Doped Indium Oxide Layers,” Applied Physics, Vol. A27, April 1982, pp. 197-206.
[15] G. Masetti, M. Severi, and S. Solmi, “Modeling of Carrier Mobility against Carrier Concentration in Arsenic-, Phosphorus-, and Boron-Doped Silicon,” IEEE Transactions on Electron Devices, Vol. 30, No. 7, August 1983, pp. 664-770.
[16] D. Chattopadhyay and H. J. Queisser, “Electron Scattering by Ionized Impurities in Semiconductors,” Reviews of Modern Physics, Vol. 53, No. 4, October 1981, pp. 745- 768.
[17] P. Ebert, Z. Zhang, F. Kluge, M. Simon, Z. Zhang and K. Urban, “Importance of Many-Body Effects in the Clustering of Charged Zn Dopant Atoms in GaAs,” Physical Review Letters, Vol. 83, No. 4, July 1999, pp. 757-760.
[18] T. Pisarkiewicz, K. Zakrzewska, and E. Leja, “Scattering of Charge Carriers in Transparent and Conducting Thin Oxide Films with a Non-Parabolic Conduction Band,” Thin Solid Films, Vol. 174, July 1989, pp. 217-223.
[19] S. Major, and K. L. Chopra, “Indium-Doped Zinc Oxide Films as Transparent Electrodes for Solar Cells,” Solar Energy Materials & Solar Cells, Vol. 17, No. 5, August 1988, pp. 319-327. doi:10.1016/0165-1633(88)90014-7
[20] J. I. Cisneros, “Optical Characterization of Dielectric and Semiconductor Thin Films by Use of Transmission Data,” Applied Optics, Vol. 37, August 1998, pp. 5262- 5270.
[21] T. Minami, “Transparent Conducting Oxide Semiconduc- tors for Transparent Electrodes,” Semiconductor Science and Technology, Vol. 20, March 2005, p. S35.
[22] K. Elmer, “Magnetron Sputtering of Transparent Conduc- tive Zinc Oxide: Relation between the Sputtering Para- meters and the Electronic Properties,” Journal of Physics D: Applied Physics, Vol. 33, January 2000, pp. 45-47.
[23] T. Minami, H. Sato, H. Nanto, and S. Takata, “Highty Conductive and Transparent Silicon Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering,” Japanese Journal of Applied Physics Part 2: Letter, Vol. 25, July 1986, pp. L776-L776.
[24] J. W. Bae, S. W. Lee and G. Y. Yeom, “Doped-Fluorine on Electrical and Optical Properties of Tin Oxide Films Grown by Ozone-Assisted Thermal CVD,” Journal of The Electrochemical Society, Vol. 154, March 2007, pp. D34-D37.
[25] H. Agura, H. Suzuki, T. Matsushita, T. Aoki and M. Okuda, “Low Resistivity Transparent Conducting Al- Doped ZnO Films Prepared by Pulsedlaser Deposition,” Thin Solid Films, Vol. 445, No. 2, July 2006, pp. 263- 267.
[26] S. M. Park, T. Ikegami and K. Ebihara, “Effects of Substrate Temperature on the Properties of Ga-Doped ZnO by Pulsed Laser Deposition,” Thin Solid Films, Vol. 513, August 2006, pp. 90-94.
[27] H. Ohta, M. Orita, M. Hirano, H. Tanji, H. Kawazoe and H. Hosono, “Highly Electrically Conductive Indium-Tin- oxide Thin Films Epitaxially Grown on Yttria-Stabilized Zirconia (100) by Pulsed-Laser Deposition,” Applied Physics Letters, Vol. 76, No. 19, April 2000, pp. 1740- 2043.
[28] E. Shanthi, A. Banerjee, V. Dutta and K.L. Chopra, “Electrical and Optical Properties of Tin Oxide Films Doped with F and (Sb+F),” Journal Applied Physics, Vol. 53, No. 3, March 1982, pp. 1615-1621.
[29] B. Thangaraju, “Structural and Electrical Studies on Highly Conducting Spray Deposited Fluorine and Anti- mony Doped SnO2 Thin Films from SnCl2 Precursor,” Thin Solid Films, Vol. 402, No. 1, January 2002, pp. 71- 78.
[30] A. Kurz, K. Brakecha, J. Puetz and M. A. Aegerter, “Strategies for Novel Transparent Conducting Sol–Gel Oxide Coatings,” Thin Solid Films, Vol. 502, April 2006, pp. 212-218.
[31] H. Hosono, M. Yasukawa and H. Kawazoe, “Novel oxide amorphous… Conducting amorphous oxides,” Journal of Non-Crystalline Solids, Vol. 203, August 1996, pp. 334-344.
[32] J. Robertson, “Electronic Structure of SnO2, GeO2, PbO2, TeO2 and MgF2,” Journal of Physics C: Solid State Physics, Vol. 12, Novembre 1979, pp. 4767-4772.
[33] R. D. Shannon, J. L. Gilson and R. J. Bouchard, “Single Crystal Synthesis and Electrical Properties of CdSnO3, Cd2SnO4, In2TeO6 and Cdln2O4,” Journal of Physics and Chemistry of Solid, Vol. 38, No. 8, September 1977, pp. 877-881.
[34] H. Kawazoe, N. Ueda, H. Un’no, T. Omata, H. Hosono and H. Tanoue, “Generation of Electron Carriers in Insulating Thin Film of MgIn2O4 Spinel by Li+ Implan- tation,” Journal of Physics, Vol. 76, December 1994, pp. 7935-7941.
[35] R. J. Cava, J. M. Phillips, J. Kwo, G. A. Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck Jr., J. H. Marshall and D. H. Rapkine, “GaInO: A New Transparent Conducting Oxide,” Applied Physics Letters, Vol. 64, No. 16, April 1994, pp. 2071-2072.
[36] T. Minami, “New n-Type Transparent Conducting Oxides,” Materials Research Bulletin, Vol. 25, No. 8, January 2000, pp. 38-44.
[37] A. J. Freeman, K. R. Poeppelmeier, T. Q. Mason, R. P. Chang and T. J. Marks, “Chemical and Thin-Film Strategies for New Transparent Conducting Oxides,” Journal of Materials Research Society Bullet, Vol. 25, August 2000, pp. 45-51.
[38] A. N. Banerjee and K. K. Chattopadhyay, “Recent Developments in the Emerging Field of Crystalline ‘p-Type’ Transparent Conducting Oxide Thin Films,” Progress in Crystal Growth and Characterization of Materials, Vol. 50, November 2005, pp. 52-105. doi:10.1016/j.pcrysgrow.2005.10.001
[39] H. Sato, T. Minami, S. Takata and T. Yamada, “Trans- parent Conducting p-Type NiO Thin Films Prepared by Magnetron Sputtering,” Thin Solid Films, Vol. 246, No. 1-2, December 1993, pp. 27-31.
[40] H. Kawazoe, “P-Type Electrical Conduction in Trans- parent Thin Films of CuAlO2,” Nature, Vol. 389, October 1997, pp. 939-942.
[41] H. Kawazoe, H. Yanagi, K. Ueda and H. Hosono, “Transparent p-Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions,” MRS Bulletin, Vol. 25, April 2000, pp. 28-36.
[42] S. Fraga, S. Karwowski and K. M. S. Saxena, “Handbook of Atomic Data,” Elsevier, Amsterdam, 1976.
[43] S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo and T. Steiner, “Recent Progress in Processing and Properties of ZnO,” Progress in Materials Science, Vol. 50, No. 3, March 2005, pp. 293-340.
[44] B. Zhang, S.-H. Wei and A. Zunger, “A Phenomeno- logical Model for Systematization and Prediction of Doping Limits in II–VI and I–III–VI2 Compounds,” Journal of Applied Physics, Vol. 83, No. 6, March 1998, pp. 3192-3196.
[45] T. Yamamoto and H. K. Yoshida, “Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO,” Japanese Journal of Applied Physics, Vol. 38, No. 2A, December 1988, pp. L166-L169.
[46] M. Joseph, H. Tabata and T. Kawai, “Production Considerations for Europium-152 Teletherapy Sources Including Design of a Source Capsule with Intrinsic Beam-Hardening Capability,” Japanese Journal of Applied Physics, Vol. 38, November 1999, pp. L1505- L1508.
[47] T. David, S. Goldsmith and R. L. Boxman, “p-Type Sb- Doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition,” Proceeding Society of Vacuum Coaters (SVC) 47th Annual Technical Conference, pp. 27-31. “cond-mat/0502150” at
[48] Y. Meng, X. Yang, H. X. Chen, J. Shen, Y. M. Jiang, Z. J. Zhang and Z. Y. Hua, “A New Transparent Conductive Thin Film In2O3: Mo,” Thin Solid Film, Vol. 394, No. 1-2, May 2001, pp. 218-222.
[49] Y. Yoshida, D. M. Wood, T. A. Gessert and T. J. Coutts, “High-Mobility, Sputtered Films of Indium Oxide Doped with Molybdenum,” Applied Physics Letters, Vol. 84, No. 12, March 2004, pp. 2097-2099. doi:10.1063/1.1687984
[50] J. E. Medvedeva, “Magnetically Mediated Transparent Conductors: In2O3 Doped with Mo,” Physical Review Letters, Vol. 97, August 2006, pp. 086401-086600. doi:10.1103/PhysRevLett.97.086401
[51] R. Dingle, H.-L. St?rmer, A. C. Gossard and W. Wiegmann, “Electron Mobilities in Modulation Doped Semiconductor Heterojunction Superlattices,” Applied Physics Letters, Vol. 33, August 1978, pp. 656-667.
[52] I. A. Rauf, “Low Resistivity and High Mobility Tin- Doped Indium Oxide Films,” Materials Letters, Vol. 18, No. 3, December 1993, pp. 123-127.
[53] J. J. Robins and C. A. Wolden, “High Mobility Oxides: Engineered Structures to Overcome Intrinsic Performance Limitations,” Applied Physics Letters, Vol. 83, No. 19, Novemeber 2003, pp. 3933-3935.
[54] G. Tuttle, H. Kroemer and J. H. English, “Electron Concentrations and Mobilities in AlSb/InAs/AlSb Quantum Wells,” Journal of Applied Physics, Vol. 65, No. 12, June 1989, pp. 5239-5242. doi:10.1063/1.343167
[55] K. Ueda, H. Tabata and T. Kawai, “Magnetic and Electric Properties of Transition-Metal-Doped ZnO Films,” Applied Physics Letters, Vol. 79, May 2001, pp. 988-990.
[56] T. Hirao, M. Furuta and T. Hiramtsu, “ZnO-Based TFT for Use in LCD,” 35th International Conference on Metallurgical Coatings and Thin Films, San Diego, 28 April- 2 May 2008.

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