Structural and Electronic Properties of Impurities on Boron Nitride Nanotube

Gabrielle P. Soares, Silvete Guerini

.

DOI: 10.4236/jmp.2011.28102                

Abstract

The structural and electronic properties of molybdenum and magnesium substitution doping in (10,0) boron nitride nanotube (BNNT), are investigated through first-principle calculations. The electronic band structures results indicate that the molybdenum doped systems behave as n-type impurity. However, the magnesium doped systems behave as p-type impurity when magnesium replaces boron, and as a n-type impurity when the magnesium replaces nitrogen. The analysis of the energies formation shows that the molybdenum replacing a boron and nitrogen atoms are more favorable than the magnesium substitution in boron and nitrogen.

Keywords

BN Nanotube, DFT, Electronic Properties

Conflicts of Interest

The authors declare no conflicts of interest.

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