Investigation of Polyaniline Thin Film and Schottky Junction with Aluminium for Electrical and Optical Characterization

Pronob Jyoti Saikia, Pratap Chandra Sarmah

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Department of Electronics, North-East Institute of Science and Technology, Jorhat, Assam, India.

DOI: 10.4236/msa.2011.28138                

Abstract

Polyaniline Powdered sample was chemically synthesized using aniline and doped with HCl. Ultra thin film and Schottky junction with Al metal have been fabricated from this powdered sample Ultrathin film of polyaniline shows amorphous nature of the film. Two activation energies of these films at two different temperatures regions within 25-120^oC have been observed. Schottky Junction with Al meal shows that the diode ideality factor is much higher than unity. Barrier height of this Schottky junction is estimated to be around 0.61eV. C-V plot of the junction indicates that the carrier concentration is about 10¹⁵cm^-3. There are various factors found to affect the junction to deviate from ideal Schottky behaviour.

Keywords

Aniline, Activation Energy, Diode Ideality Factor, Barrier Height

Conflicts of Interest

The authors declare no conflicts of interest.

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