The Effect of Light on the CVC of Strained p-n-Junction in a Strong Microwave Field


For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.

Share and Cite:

Dadamirzaev, M. (2015) The Effect of Light on the CVC of Strained p-n-Junction in a Strong Microwave Field. Journal of Modern Physics, 6, 2275-2279. doi: 10.4236/jmp.2015.615231.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Hall, H.H., Bardeen, J. and Pearson, G.L. (1951) Physical Review, 84, 129-132.
[2] Polyakova, A.L. (1972) Acoustic Magazine, 18, 1-22.
[3] Zaynabidinov, S.Z., Turaev, A.R., Fistul, V.I. and Khodzhaev, M.D. (1989) FTP, 23, 2118-2121.
[4] Bahadyrhanov, M.K., Abduraimov, A. and Iliev, X.M. (1988) FTP, 22, 123-128.
[5] Ablyazimova, N.A., Veynger, A.I. and Food, V.S. (1992) Physics and Engineering of St. Petersburg Semiconductors, 26, 1041-1047.
[6] Dadamirzaev, M.G. (2015) Journal of Modern Physics-USA, 6, 176-180.

Copyright © 2023 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.