The Effect of Light on the CVC of Strained p-n-Junction in a Strong Microwave Field

DOI: 10.4236/jmp.2015.615231   PDF   HTML   XML   1,936 Downloads   2,211 Views  

Abstract

For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.

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Dadamirzaev, M. (2015) The Effect of Light on the CVC of Strained p-n-Junction in a Strong Microwave Field. Journal of Modern Physics, 6, 2275-2279. doi: 10.4236/jmp.2015.615231.

Conflicts of Interest

The authors declare no conflicts of interest.

References

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http://dx.doi.org/10.4236/jmp.2015.62023

  
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