Active and Capacitive Conductance of the Diode in a Strong Microwave Field

Muhammadjon Gulomkodirovich Dadamirzaev

Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan.

DOI: 10.4236/jamp.2015.312194                

Abstract

It is shown that the mean value of the capacitive current arising in the p-n-junction in a microwave field is zero, and the average value of the active current independently of the current value is different from zero and is equal to the current generated by the diode.

Keywords

Hot Electrons, The Microwave Field, The Active and Capacitive Conductivity, Fault Current, p-n-Junction

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	Buss, A.G. and Gurevich, Y.G. (1975) Hot Electrons, and Strong Electromagnetic Field in the Plasma of Semiconductors and Gas Discharge. Nauka, Moscow, 389 p.
[2]	Bass, F.G., Bochkov, B.S. and Gurevich, Y.G. (1984) The Electrons and Phonons in Bounded Semiconductors. Nauka, Moscow, 288 p.
[3]	Sah, C.T., Noyce, R.H. and Shockly, W. (1957) Carrier Generation and Recombination in p-n-Junctions and p-n-Junctions Characteristics. Proceedings of the IRE, 45, 1228-1243. http://dx.doi.org/10.1109/JRPROC.1957.278528
[4]	Guliamov, G., Dadamirzaev, M.G. and Boydedaev, S.R. (2000) Kinetics of the Establishment of the Thermoelectric Power of Hot Carriers in the p-n-Junction, Taking into Account Heating. Semiconductors, 34, 266-269.
[5]	Veynger, A.I. and Sargsiyan, M.P. (1980) The Kinetics of the Thermopower Arising in the p-n-Junction with Heating Carrier. Semiconductors, 14, 2020-2027.
[6]	Avakyants, G.M. (1954) On the Theory of Contact Phenomena When. Journal of Experimental and Theoretical Physics, 27, 333-338.
[7]	Veynger, A.I., Paritssky, L.G., Akopyan, E.A. and Dadamirzaev, G. (1975) Thermoelectric Power of Hot Carriers in the p-n-Junction. Semiconductors, 9, 216-224.
[8]	Bonch-Bruyevich, V.L., Zvyagin, I.P. and Mironov, A.F. (1972) Blast Electrical Instability in Semiconductors. Nauka, Moscow, 414 p.
[9]	Gulyamov, G. and Shamirzaev, S.H. (1981) Thermoelectric Power of Hot Carriers in the p-n-Junction, Taking into Account Heating. Lattice Semiconductors, 15, 1858-1861.
[10]	Gulyamov, G., Dadamirzaev, M.G., Boydedaev, S.R. and Gulyamov A.G. (2007) Nonideality Factor of CVC of p-n-Junction in a Strong Microwave Field. International Scientific Conference: Nonequilibrium Processes in Semiconductors and Semiconductor Structures, Tashkent, 1-3 February 2007, 147-148.
[11]	Guliamov, G., Dadamirzaev, M.G. and Boydedaev, S.R. (2000) EMF Hot Carriers Due to the Modulation of the Surface Potential in a Strong Microwave Field. Semiconductors, 34, 572-575.
[12]	Picos, G.E. (1965) Fundamentals of the Theory of Semiconductor Devices. Nauka, Moscow, 448 p.
[13]	Ablyazimova, N.A., Veynger, A.I. and Pitanov, V.S. (1988) The Electrical Properties of Silicon p-n-Junctions in Strong Microwave Fields. Semiconductors, 22, 2001-2007.
[14]	Ablyazimova, N.A., Veynger, A.I. and Pitanov, V.S. (1992) The Impact of a Strong Microwave Field in the Photovoltaic Properties of Silicon p-n-Junctions. Semiconductors, 26, 1041-1047.
[15]	Usanov, D.A., Skripal, A.V. and Ugryumova, N.V. (1998) The Negative Resistance in Structures Based on the p-n-Junction in a Microwave Field. Semiconductors, 32, 1399-1402. http://dx.doi.org/10.1134/1.1187600