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New Method of Determining the Landau Levels in Narrow-Gap Semiconductors

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DOI: 10.4236/ojapps.2015.512073    3,281 Downloads   3,609 Views  

ABSTRACT

With the help of mathematical models, the temperature dependence of the density of energy states was determined in a quantizing magnetic field. The influence of the effective mass at the temperature dependence of the density of the energy states in a strong quantizing magnetic field is investigated. The dependence temperature of density of energy states graph is obtained in a strong magnetic field for InSb.

Cite this paper

Gulyamov, G. , Erkaboev, U. , Majidova, G. , Qosimova, M. and Davlatov, A. (2015) New Method of Determining the Landau Levels in Narrow-Gap Semiconductors. Open Journal of Applied Sciences, 5, 771-775. doi: 10.4236/ojapps.2015.512073.

Conflicts of Interest

The authors declare no conflicts of interest.

References

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