Effect of Annealing on Structural, Morphological, Electrical and Optical Studies of Nickel Oxide Thin Films

Vikas Patil Patil, Shailesh Pawar, Manik Chougule, Prasad Godse, Ratnakar Sakhare, Shashwati Sen, Pradeep Joshi

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Materials Research Laboratory, School of Physical Sciences, Solapur University, Solapur-413255, M.S., India.

DOI: 10.4236/jsemat.2011.12006                

Abstract

Sol gel spin coating method has been successfully employed for the deposition of nanocrystalline nickel oxide (NiO) thin films. The films were annealed at 400°C - 700°C for 1 h in an air and changes in the structural, morphological, electrical and optical properties were studied. The structural properties of nickel oxide films were studied by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD analysis shows that all the films are crystallized in the cubic phase and present a random orientation. Surface morphology of the nickel oxide film consists of nanocrystalline grains with uniform coverage of the substrate surface with randomly oriented morphology. The electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10^-4 to 10^-2(Ωcm)^-1 after annealing. The decrease in the band gap energy from 3.86 to 3.47 eV was observed after annealing NiO films from 400^oC - 700^oC. These mean that the optical quality of NiO films is improved by annealing.

Keywords

Nickel Oxide, Sol Gel Method, Structural Properties, Optoelectronic Properties

Conflicts of Interest

The authors declare no conflicts of interest.

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