Characterization of InGaN Solar Cells

Abstract

The III-V materials are extensively studied for optoelectronic applications in the blue and UV spectral regions. InGaN ternary alloy is considered for its wide spectral coverage, good electrical characteristics and appreciable resistance to high electrical currents. For this purpose, the operation of InGaN photovoltaic cells was studied by 2D numerical simulation under AM1.5 spectrum illumination, using the software Silvaco and the two environments Athena/Atlas.

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Bochra, N. and Abdelhak, B. (2015) Characterization of InGaN Solar Cells. Journal of Materials Science and Chemical Engineering, 3, 88-91. doi: 10.4236/msce.2015.311011.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] Zhang, X.B., Wang, X.L., Xiao, H.L., Yang, C.B., Ran, J.X., Wang, C.M., Hou, Q.F. and Li, J.M. (2007) Simulation of In0.65Ga0.35 N Single-Junction Solar Cell. Journal of Physics D: Applied Physics, 40, 7335-7338 (s.d.).
[2] Shen, X.M., Lin, S., Li, F.B., Wei, Y.M., Zhong, S.K., Wan, H.B. and Li, J.G. (2008) Simulation of the InGaN-Based Tandem Solar Cell. Photovoltaic Cell and Module Technologies II, Proceedings of SPIE, Vol. 7045, 70450E (s.d.).

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