Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination

DOI: 10.4236/jamp.2015.311178   PDF   HTML   XML   3,140 Downloads   3,730 Views   Citations


The aim of this study is to show the influence of the wavelength on the electrical parameters of vertical parallel junction silicon solar cell by use of impedance spectroscopy technique. The Bode diagrams of the diffusion capacitance are shown for different wavelengths while the solar cell operates under both open circuit and short circuit conditions. The Nyquist diagram of the diffusion capacitance has shown the extension of the space charge region for various wavelengths.

Share and Cite:

Sahin, G. , Dieng, M. , Moujtaba, M. , Ngom, M. , Thiam, A. and Sissoko, G. (2015) Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination. Journal of Applied Mathematics and Physics, 3, 1536-1543. doi: 10.4236/jamp.2015.311178.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Chawla, G.B.R. and Gummel, H.K. (1971) Transition Region Capacitance of Diffusion p-n Junction. IEEE Transactions on Electron Devices, 18, 178-195.
[2] Yaron, G. and Frohman-Bentchkowsky, D. (1980) Capacitance Voltage Characterization of Poly Si-SiO2-Si Structures. Solid-State Electronics, 23, 433-439.
[3] Jakubowski, A. (1981) Graphic Method of Substrate Doping Determination from C-V Characteristics of MIS Capacitors. Solid-State Electronics, 24, 985-987.
[4] Sissoko, G., Dieng, B., Corréa, A., Adj, M. and Azilinon, D. (1998) Silicon Solar Cell Space Charge Region Width Determination by a Study in Modelling. Proceeding of the World Renewable Energy Conference and Exhibition, 3, 1852-1855.
[5] Bayhan, H. and Kavasglu, A.S. (2003) Admittance and Impedance Spectroscopy on Cu(In,Ga)Se2 Solar Cells. Turkish Journal of Physics, 27, 529-535.
[6] Diallo, H.L., Wereme, A., Maiga, A.S. and Sissoko, G. (2008) New Approach of Both Junction and Back Surface Recombination Velocities in a 3D Modelling Study of a Polycrystalline Silicon Solar Cell. The European Physical Journal Applied Physics, 42, 203-211.
[7] Ly Diallo, H., Dieng, B., Ly, I., Dione, M.M., Ndiaye, M., Lemrabott, O.H., Bako, Z.N., Wereme, A. and Sissoko, G. (2012) Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell. Research Journal of Applied Sciences, Engineering and Technology, 4, 2626-2631.
[8] Mbodji, S., Mbow, B., Barro, F.I. and Sissoko, G. (2011) A 3D Model for Thickness and Diffusion Capacitance of Emitter-Base Junction Determination in a Bifacial Polycrystalline Solar Cell under Real Operating Condition. Turkish Journal of Physics, 35, 281-291.
[9] Sow, E., Mbodji, S., Zouma, B., Zoungrana, M., Zerbo, I., Sere, A. and Sissoko, G. (2012) Determination in 3D Modeling Study of the Width Emitter Extension Region of the Solar Cell Operating in Open Circuit Condition by the Gauss’s Law. International Journal of Science, Environment and Technology (IJSET), 1, 230-246.
[10] Diao, A., Thiam, N., Zoungrana, M., Ndiaye, M., Sahin, G. and Sissoko, G. (2014) Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits. World Journal of Condensed Matter Physics, 4, 84-92.
[11] Dieng, A., Zerbo, I., Wade, M., Maiga, A.S. and Sissoko, G. (2011) Three-Dimensional Study of a Polycrystalline Silicon Solar Cell: The Influence of the Applied Magnetic Field on the Electrical Parameters. Semiconductor Science and Technology, 26, 095023.
[12] Dione, M.M., Mbodji, S., Samb, M.L., Dieng, M., Thiame, M., Ndoye, S., Barro, F.I. and Sissoko, G. (2009) Vertical Junction under Constant Multispectral Light: Determination of Recombination Parameters. Proceedings of the 24th European Photovoltaic Solar Energy Conference, 465-469.
[13] Arora, J.D., Singh, S.N. and Mathur, P.C. (1981) Surface Recombination Effects on the Performance of n+-p Step and Diffused Junction Silicon Solar Cells. Solid State Electronics, 24, 739-747.
[14] Honma, N., Munakata, C. and Shimizu, H. (1988) Calibration of Minority Carrier Lifetime Measured with an ac Photovoltaic Method. Japanese Journal of Applied Physics, 24, 1322-1326.
[15] Mandelis, A. (1989) Coupled ac Photocurrent and Photothermal Reflectance Response Theory of Semiconducting p-n Junctions. Journal of Applied Physics, 66, 5572-5583.
[16] Sissoko, G., Museruka, C., Corréa, A., Gaye, I. and Ndiaye, A.L. (1996) Light Spectral Effect on Recombination Parameters of Silicon Solar Cell. World Renewable Energy Congress, Part III, 1487-1490.
[17] Gôkan, S., Thiam, N., Ndiaye, M., Diao, A., Mbow, B. and Sissoko, G. (2014) Influence of Illumination Wavelength on the Electrical Parameters of a Vertical Junction Silicon Solar Cell in Frequency Modulation. IPASJ International Journal of Electrical Engineering (IIJEE), 2, 23-28.
[18] Hu, C.C. (2010) Modern Semiconductor Devices for Integrated Circuits. Pearson/Prentice Hall, New Jersey.
[19] Boer, K.W. (2010) Introduction to Space Charge Effects in Semiconductor. Springer-Verlag.
[20] Pannalal, L.B. (1973-1974) Signals, Systems and Controls. Intext Educational, New York.
[21] Kosyachenko, L.A. (2011) Solar Cells—Dye-Sensitized Devices; InTech, Rijeka, Croatia.

comments powered by Disqus

Copyright © 2020 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.