The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal

Hrant N. Yeritsyan^1*, Aram A. Sahakyan¹, Norair E. Grigoryan¹, Eleonora A. Hakhverdyan¹, Vachagan V. Harutyunyan¹, Agasi S. Hovhannisyan¹, Vahan A. Sahakyan², Armenuhi A. Khachatryan², Bagrat A. Grigoryan³, Laura S. Hakobyan³, Gayane A. Amatuni³, Ashot S. Vardanyan³, Vasili M. Tsakanov³

¹A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia.
²National Institute of Metrology, Yerevan, Armenia.
³CANDLE Synchrotron Research Institute, Yerevan, Armenia.

DOI: 10.4236/jmp.2015.614211                

Abstract

Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiO_n (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.

Keywords

Impurity Oxygen, Silicon Crystal, Electron Irradiation, Infrared (IR) Absorption Spectra, Annealing, Vacancy, Interstitial Atom

Conflicts of Interest

The authors declare no conflicts of interest.

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