Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study


In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector are also compared and discussed. GaAs-based device shows a significant enhancement in detector with a better performance for a InGaAs photodetector compared to InP- based device. In addition, our results show that the device performance is influenced by the conduction band offset. This work proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high performance detector with optimally tuned band gap.

Share and Cite:

Zhang, Z. , Miao, G. , Song, H. , Jiang, H. , Li, Z. , Li, D. , Sun, X. and Chen, Y. (2015) Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study. World Journal of Engineering and Technology, 3, 6-10. doi: 10.4236/wjet.2015.34B002.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Hoogeveen, R.W.M., van der A, R.J. and Goede, A.P.H. (2001) Extended Wavelength InGaAs Infrared (1.0-2.4 μm) Detector Arrays on SCIAMACHY for Space-Based Spectrometry of the Earth Atmosphere. Infrared Phys. Technol., 42, 1-16.
[2] Zhang, K.F., Tang, H.J., Wu, X.L., Li, Y.F., Li, T., Li, X. and Gong, H.M. (2009) Effects of an Anodic Oxide Passivation Layer on Mesa-Type InGaAs (PIN) Photodetectors. Semicond. Sci. Technol., 24, 015008.
[3] Gu, Y., Wang, K., Li, C., Fang, X., Cao, Y.Y. and Zhang, Y.G. (2011) High Indium Content InGaAs Photodetector: with InGaAs or InAlAs Graded Buffer Layers. J. Infrared Milli-meter Waves, 30, 481-485.
[4] Anderson, C.R. (2009) Efficient Solution of the Schroedin-ger-Poisson Equations in Layered Semiconductor Devices. J. Comput. Phys., 228, 4745.
[5] Marquardt, O., Boeck, S., Freysoldt, C., Hickel, T., Schulz, S., Neu-gebauer, J. and O’Reilly, E.P. (2014) A Generalized Plane-Wave Formulation of k?p Formalism and Conti-nuum-Elasticity Approach to Elastic and Electronic Properties of Semiconductor Nanostructures. Comput. Mater. Sci., 95, 280-287.
[6] Miao, G.Q., Zhang, T.M., Zhang, Z.W. and Jin, Y.X. (2013) Extended Spectral Response in In0.82Ga0.18As/InP Photodetector Using InP as a Window Layer Grown by MOCVD. Cryst Eng Comm, 15, 8461-8464.
[7] Galluppi, M., Geelhaar, L. and Riechert, H. (2006) Band Offsets Analysis of Dilute Nitride Single Quantum Well Structures Employing Surface Photo Voltage Measurements. J. Electron. Mater., 35, 733-737.
[8] Chen, X.Y., Zhang, Y.G., Gu, Y., Zhou, L., Cao, Y.Y., Fang, X. and Li, H. (2014) GaAs-Based In0.83Ga0.17As Photodetector Structure Grown by Gas Source Molecular Beam Epitaxy. J. Cryst. Growth, 393, 75-80.

Copyright © 2022 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.