The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

Gafur Gulyamov; A. G. Gulyamov; A. Q. Ergashev; B. T. Abdulazizov

doi:10.4236/jmp.2015.613197

Home > Journals > Physics & Mathematics > JMP

JMP> Vol.6 No.13, October 2015

Share This Article:

The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor ()

Abstract Full-Text HTML XML

Download as PDF (Size:1252KB) PP. 1921-1926

DOI: 10.4236/jmp.2015.613197 2,505 Downloads 2,835 Views Citations

Author(s) Leave a comment

Gafur Gulyamov^1*, A. G. Gulyamov², A. Q. Ergashev¹, B. T. Abdulazizov³

Affiliation(s)

¹Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan.
²Physico-Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan.
³Namangan State University, Namangan, Uzbekistan.

ABSTRACT

Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10^-3 s and capture cross sections of 10^-16 sm². For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.

KEYWORDS

Phase Portraits, The Generation of Charge Carriers, The Recombination of Charge Carriers

Cite this paper

Gulyamov, G. , Gulyamov, A. , Ergashev, A. and Abdulazizov, B. (2015) The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor. Journal of Modern Physics, 6, 1921-1926. doi: 10.4236/jmp.2015.613197.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	Andronov, А.А., Vitt, А.А. and Haykin, C.E. (1985) Vibration Theory. Nauka, Moscow. (In Russian)

[2]	Shamirzaev, S.H., Gulyamov, G., Dadamirzaev, M.G., Sharibaev, N.Y. and Gulyamov, A.G. (2011) FIP (Fyzicheckaya Injeneriya Poverkhnosti), 1, 68-71.

[3]	Bir, G.L. and Pikus, G.E. Symmetry and Strain-Induced Effects in Semiconductors. Nauka, Moscow, 1972; Wiley, New York, 1975.

[4]	Bonch-Bruevich, V. and Kalashnikov, S. (1977) Semiconductor Physics. Nauka, Moscow. (In Russian)

[5]	Kireev, P.S. (1975) Semiconductor Physics. Vishaya shkola, Moscow. (In Russian)

[6]	Blakemore, J.S. (1974) The Theory of the Rate of Recombination in Semiconductors. In: Landsberg, P., Ed., Chapter 16 in the Book: Problems of Thermodynamics and Statistical Physics, Mir, Moscow, 399-430. (In Russian)

[7]	Gulyamov, A.G. (2015) World Journal of Condensed Matter Physics, 5, 60-65.

[8]	Ridley, B.K. (1999) Quantum processes in Semiconductors. Clarendon Press, Oxford.

[9]	Bonch-Bruevich, V.L., Zvyagin, I.P., Karpenko, I.V. and Mironov, A.G. (1987) Problems in Physics of Semiconductors. Nauka, Moscow. (In Russian)