The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

Gafur Gulyamov; A. G. Gulyamov; A. Q. Ergashev; B. T. Abdulazizov

doi:10.4236/jmp.2015.613197

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Journal of Modern Physics > Vol.6 No.13, October 2015

The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor ()

Gafur Gulyamov^1*, A. G. Gulyamov², A. Q. Ergashev¹, B. T. Abdulazizov³

¹Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan.
²Physico-Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan.
³Namangan State University, Namangan, Uzbekistan.

DOI: 10.4236/jmp.2015.613197 PDF HTML XML 2,637 Downloads 2,965 Views Citations

Abstract

Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10^-3 s and capture cross sections of 10^-16 sm². For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.

Keywords

Phase Portraits, The Generation of Charge Carriers, The Recombination of Charge Carriers

Share and Cite:

Gulyamov, G. , Gulyamov, A. , Ergashev, A. and Abdulazizov, B. (2015) The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor. Journal of Modern Physics, 6, 1921-1926. doi: 10.4236/jmp.2015.613197.

Conflicts of Interest

The authors declare no conflicts of interest.

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