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Effect of Mechanical and Chemical Scarification on Germination of Dodder (Cuscuta campestris Yunck.) Seed

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DOI: 10.4236/wjet.2015.33B006    6,826 Downloads   7,798 Views  

ABSTRACT

Experiments were carried out to evaluate the effect of seed treatment on germination of Cuscuta campestris. This may provide the possible ways to overcome the problem of dormancy in Cuscuta campestris. The experiments were conducted in the Laboratory of Crop Production and Horticulture, Modibbo Adama University of Technology, Yola, Adamawa State, Nigeria, using mechanical scarification and tetraoxosulphate (VI) acid (H2SO4). For the mechanical scarification the treatments were unscarified, scarified using sandpaper and scarified using gravel arranged in a completely randomized design (CRD) and replicated four times. For the tetraoxosulphate (VI) acid (H2SO4) scarification, the treatment of control, 9:1, 7:3, 1:1, 4:6, 3:7, 2:8 and 1:9 H2SO4 were laid out in a Split plot design and replicated three times. The mechanical scarification was not significant (P ≤ 0.05), a rapid increase of germination from day 3 to day 9 was observed, and the highest rate of germination percentage (14% - 22%) obtained on day 9. Tetraoxosulphate (VI) acid treatment of 4:6 concentrations significantly gave the highest C. campestris seeds germination percentage (40.07%) compared with the rest of the treatments, while the time of soaking the seeds in the tetraoxosulphate (VI) acid showed that soaking the seeds for 1 minute significantly gave the highest percentage germination (39.98%) of C. campestris compared with the 3 and 5 minutes soaking treatments. It can be concluded that sulphuric acid of 4:6 concentrations treatments has the potentiality to break dormancy of C. campestris seeds.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Mustapha, A. , Gworgwor, N. and Jakusko, B. (2015) Effect of Mechanical and Chemical Scarification on Germination of Dodder (Cuscuta campestris Yunck.) Seed. World Journal of Engineering and Technology, 3, 31-36. doi: 10.4236/wjet.2015.33B006.

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