Clusters of Radiation Defects in Silicon Crystals

Hrant N. Yeritsyan^1*, Aram A. Sahakyan¹, Norair E. Grigoryan¹, Vachagan V. Harutunyan¹, Vahan A. Sahakyan², Armenuhi A. Khachatryan²

¹A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia.
²National Institute of Metrology, Yerevan, Armenia.

DOI: 10.4236/jmp.2015.69132                

Abstract

While considerable progress has been achieved in radiation influence on the solid states, the quantitative assessment of defect production is very scarce. In this paper radiation defects studies in silicon crystals are briefly reviewed and comprehensively analyzed depending on irradiation energy and dose, paying special attention to electron irradiation in wide energy spectrum when crystal lattice disordered regions (clusters) occur. Electron irradiation, which is a simple way to introduce intrinsic defects, was used as one of the most powerful techniques to study point and cluster defects which affect properties of semiconductors depending on irradiation energy. Fundamental aspects of radiation induced defects are discussed and it is shown that they bring information on the threshold energy for atomic displacement, on the recombination of vacancy—interstitial pair and mainly, on radiation defects cluster formation which essentially influences on the irradiating material properties. The determination of the irradiation critical dose and energy for the formation of homogeneous disordered regions (clusters) are detailed.

Keywords

Clusters of Radiation Defects, Point Radiation Defects, Irradiation Dose, Irradiation Energy, Semiconductors, Silicon

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	Smirnov, L.S., Ed. (1977) Physical Processes in Irradiated Semiconductors. “Nauka”, Siberian Branch of Academy of Sciences of Soviet Union, Novosibirsk, 256 p.
[2]	Leroy, C. and Rancoita, P.-G. (2007) Reports on Progress in Physics, 70, 493-625. http://dx.doi.org/10.1088/0034-4885/70/4/R01
[3]	Akishin, A.I. (2007) Kosmicheskoe Materialovedenie. Edition of MGU im. Lomonosova, Moscow, 234 p. (In Russian)
[4]	Makhkamov, Sh., Tursunov, N.A., Ashurov, M., Saidov, R.P. and Khakimov, Z.M. (2001) Semiconductor Science and Technology, 16, 543-547. http://dx.doi.org/10.1088/0268-1242/16/7/303
[5]	Pagava, T.A. (2004) Fizika i Tekhnika Poluprovodnikov, 38, 665-669.
[6]	Gurovich, B.A., Dolgij, D.I., et al. (2001) Uspekhi Fizicheskikh Nauk, 171, 105-117. http://dx.doi.org/10.3367/UFNr.0171.200101d.0105
[7]	Barabanenkov, M.Yu., Leonov, A.V., Mordkovich, V.N. and Omel’yanovskaya, N.M. (1999) Fizika i Tekhnika Poluprovodnikov, 33, 537-541.
[8]	Barabanenkov, M.Yu., Leonov, A.V., Mordkovich, V.N. and Omel’yanovskaya, N.M. (1999) Fizika i Tekhnika Poluprovodnikov, 33, 897-899.
[9]	Pagava, T. and Basheleishvili, Z. (2002) Fizika i Tekhnika Poluprovodnikov, 36, 1157. (In Russian)
[10]	Emtsev, V.V., Ehrhart, P., Poloskin, D.S. and Emtsev, K.V. (2007) Journal of Material Science: Materials in Electronics, 18, 711-714. http://dx.doi.org/10.1007/s10854-006-9103-6
[11]	Seitz, F. and Koehler, J. (1956) Solid State Physics, 2, 307-442.
[12]	Vavilov, V.S. (1963) Interaction of Radiation with Semiconductors. Physical-Mathematics Literature, Moscow, 264 p. (In Russian)
[13]	Emtsev, V.V., Ivanov, A.M., Kozlovski, V.V., Lebedev, A.A., Oganesyan, G.A., Strokan, N.B. and Wagner, G. (2012) FTP, 46, 473-481.
[14]	Watkins, G.D. (2005) In: Cahn, R.W., Haasen, P. and Kramer, E.J., Eds., Materials Science and Technology, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Vol. 4/5, 105.
[15]	Ukhin, N.A. (1972) FTP, 6, 931.