EDESR and ODMR of Impurity Centers in Nanostructures Inserted in Silicon Microcavities

Nikolay T Bagraev, Vladimir A. Mashkov, Edward Yu Danilovsky, Wolfgang Gehlhoff, Dmitrii S. Gets, Leonid E Klyachkin, Andrei A Kudryavtsev, Roman V. Kuzmin, Anna M Malyarenko, Vladimir V Romanov

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DOI: 10.4236/jmp.2011.26064                

Abstract

We present the first findings of the new electrically- and optically-detected magnetic resonance technique [ED electron spin resonance (EDESR) and (ODMR)] which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without the application of the external cavity as well as a high frequency source and recorder, with measuring the only magnetoresistance (EDESR) and transmission (ODMR) spectra within frameworks of the excitonic normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane. The new resonant positive magnetoresistance data are interpreted here in terms of the interference transition in the diffusive transport of free holes respectively between the weak antilocalization regime in the region far from the ESR of a paramagnetic point defect located inside or near the conductive channel and the weak localization regime in the nearest region of the ESR of that defect.

Keywords

Silicon Microcavity, Quantum Well, ESR, Bound Exciton, Trigonal Centers, Single Centers, Carbon, ODMR

Conflicts of Interest

The authors declare no conflicts of interest.

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