The Role of Silver Additions in Formation of Sn-Bi-Ag Semiconductor Alloys by Rapid Solidification

Tarek El Ashram^1,2

¹Physics Department, Faculty of Science, Port Said University, Port Said, Egypt.
²Physics Department, Preparatory Year Deanship, Jazan University, Jazan, Kingdom of Saudi Arabia.

DOI: 10.4236/msa.2015.63027                

Abstract

Five alloys Sn-5Bi-xAg (x = 0, 1, 2, 3, and 4 in at %) are produced by rapid solidification using melt-spinning technique. From temperature dependence of electrical resistivity (TDR), it is found that the Sn-5Bi-xAg (x = 1, 2, 3, 4 in at %) rapidly solidified by melt spinning technique are narrow band semiconductor alloys. The energy gap Eg decreases by increasing Ag concentration from 203 meV for Sn-5Bi-1Ag to 97.5 meV for Sn-5Bi-4Ag alloy. From x-ray diffraction analysis (XRD), it is found that the Hume-Rothery condition for phase stability is not satisfied for this alloy.

Keywords

Rapid Solidification, Semiconductor, Energy gap, Resistivity, Sn-Bi-Ag Alloys

Conflicts of Interest

The authors declare no conflicts of interest.

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