[1]
|
J. Bryzek, K. Petersen, J.R. Mallon Jr., L. Christel, F. Pourahmadi, “Silicon Sensors and Microstructures”, Ed. NovaSensor, Silicon Valey, 1990.
|
[2]
|
R. Linnemann, T. Gotszalk, I.W. Rangelow, P. Dumania, E. Oesterschultze, “Atomic force microscopy and lateral force microscopy using piezoresistive cantilevers”, J. Vac. Sci. Technol., Vol. B 14 (2), 1996, pp. 856-860.
|
[3]
|
J. Thaysen, A. Boisen, O. Hansen, S. Bouwstra, “Atomic force microscopy probe with piezoresistive read-out and highly symmetrical Wheatstone bridge arrangement”, Sensors and Actuators, Vol. A83, 2000, pp. 47-53.
|
[4]
|
S.P. Timoshenko, “History of Strength of Materials”, New York: Dover Publ., 1983.
|
[5]
|
G.L. Bir, G.E. Pikus, “Symmetry and Strain-induced Effects in Semiconductors”, Wiley - New York, 1972.
|
[6]
|
Y. Kanda, “Piezoresistance Effect of Silicon”, Sensors and Actuators, Vol. A28, No. 2, 1991, pp. 83-91.
|
[7]
|
C.S. Smith, “Piezoresistance Effect in Germanium and Silicon”, Phys. Rev., Vol. 94, No. 1, 1954, pp. 42-49.
|
[8]
|
S.M. Sze, “Semiconductor Sensors”, Wiley - New York, 1994.
|
[9]
|
C. Canall, C. Canali, G. Ferla, B. Morten, A. Taronif, “Piezoresistivity effects in MOS-FET useful for pressure transducers”, J. Phys. D: Appl. Phys., Vol. 12, 1979, pp. 1973-1983.
|
[10]
|
Polish patent pending P.361525.
|
[11]
|
P. Dumania, “Nanosensitive CMOS system for the silicon microbeam deformation measurements”, Proc. IX Conf. COE 2006, 2006, pp. 449-452 (in Polish).
|
[12]
|
P. Dumania, et al, “CMOS ring oscillator as a detection unit for silicon nanosensitive microprobes”, Proc. X Conf. COE 2006, 2006, pp. 214-216 (in Polish).
|
[13]
|
G. Shekhawat, S.-H. Tark, V.P. Dravid, “MOSFET- embedded microcantilevers for measuring deflection in biomolecular sensors”, Science, Vol. 311, 2006, pp. 1592- 1595.
|