Influence of Thickness on the Photosensing Properties of Chemically Synthesized Copper Sulfide Thin Films

Abhiman Dattatray Dhondge¹, Sunil Rameshgir Gosavi¹, Narayani Madhukar Gosavi², Chatur Pundlik Sawant³, Amar Maruti Patil⁴, Abhijeet Ravsaheb Shelke⁴, Nishad Gopal Deshpande^4*

¹C. H. C. Arts, S. G. P. Commerce, and B. B. J. P. Science College, Taloda, India.
²Government College of Engineering, Jalgaon, India.
³G. T. Patil College, Nandurbar, India.
⁴q-SpinTech & Nanomaterials Laboratory, Department of Physics, Shivaji University, Kolhapur, India.

DOI: 10.4236/wjcmp.2015.51001                

Abstract

We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposition method. The changes in film thickness as a function of time were monitored. The films were characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FE-SEM), optical measurement techniques and electrical measurement. X-ray diffraction results indicate that all the CuS thin films have an orthorhombic (covellite) structure with preferential orientation along (113) direction. The intensity of the diffraction peaks increases as thickness of the film increases. Uniform deposition having nanocrystalline granular morphology distributed over the entire glass substrate was observed through FE-SEM studies. The crystalline and surface properties of the CuS thin films improved with increase in the film thickness. Transmittance (except for 210 nm thick CuS film) together with band gap values was found to decrease with increase in thickness. I-V measurements under dark and illumination condition show that the CuS thin films give a good photoresponse.

Keywords

Copper Sulfide (CuS), Chemical Bath Deposition (CBD), Thin Film, X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Photosensitivity

Conflicts of Interest

The authors declare no conflicts of interest.

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