A Manganese Ions Ground State in Mn_xSi_1–x: Negative- U Properties Centre?

S. M. Yakubenya

RRC “Kurchatov Institute”, Moscow, Russia.

DOI: 10.4236/ns.2015.71001                

Abstract

In the paper, the properties of magnetic diluted and strong correlated systems of Mn_xSi_1–x systems are discussed. The double defects including manganese ion and silicon vacancy are the frame work of the our model introduced for the description of these systems properties. The role of the Jahn-Teller distortions of different symmetry types in MnSi system magnetic-properties formation is discussed. It has been established that the manganese related defect is the center with negative-U properties and Jahn-Teller’s full symmetric vibration mode initiates change of a crystal-field value from intermediate to strong.

Keywords

Manganese Silicide, Silicon, Impurity, Strong Correlated System, Jahn-Teller Effect

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	Izumov, U.A. and Kurmaev, E.Z. (2008) Materials with Strong Electron Correlations. Uspekhi Fizicheskikh Nauk, 178, 25-60. http://dx.doi.org/10.3367/UFNr.0178.200801b.0025
[2]	Stishov, S.M. and Petrova, A.E. (2011) Helicoidal Band Magnatic MnSi. Uspekhi Fizicheskikh Nauk, 181, 1157-1170. http://dx.doi.org/10.3367/UFNr.0181.201111b.1157
[3]	Karado, K., Matsuzaki, I., Yamazuki, I., Kreitzman, S.R. and Brewer, J.H. (1990) Spin Dynamics of the Itinerant Helimagnet MnSi Studied by Positive Muon Spin Relaxation. Physical Review B, 42, 6515-6522. http://dx.doi.org/10.1103/PhysRevB.42.6515
[4]	Grigoriev, S.V., Maleyev, S.V., Okorokov, A.I., Chetverikov, Yu.O. and Eckerlebe, H. (2006) Field-Induced Reorientation of the Spin Helix in MnSi near Tc. Physical Review B, 73, Article ID: 224440. http://dx.doi.org/10.1103/PhysRevB.73.224440
[5]	Petrova, A.E., Bauer, E.D., Krasnorusski, V. and Stishov, S.M. (2006) Behavior of the Electrical Resistivity of MnSi at the Ferromagnetic Phase Transition. Physical Review B, 74, Article ID: 092401. http://dx.doi.org/10.1103/PhysRevB.74.092401
[6]	Macdonald, D., Rosenits, P. and Deenapanray, P.N.K. (2007) Recombination Activity of Manganese in p- and n-Type Crystalline Silicon. Semiconductor Science and Technology, 22, 163-168. http://dx.doi.org/10.1088/0268-1242/22/2/028
[7]	Roth, T., Rosenits, P., Deiz, S., Glunz, S.W., Macdonald, D., Beljakowa, S. and Pensl, G. (2007) Electronic Properties and Dopant Pairing Behavior of Manganese in Boron-Doped Silicon. Journal of Applied Physics, 102, Article ID: 103716. http://dx.doi.org/10.1063/1.2812698
[8]	Harrison, W.A. (1980) Electronic Structure and Properties. W.H. Freeman and Company, San Francisco.
[9]	Hayes, T.M., Allen, J.W., Boyce, J.B. and Hauser, J.J. (1981) Interplay of Structure and Magnetic Properties in MnSi, a Concentrated Spin-Glass. Physical Review B, 23, 4691-4699. http://dx.doi.org/10.1103/PhysRevB.23.4691
[10]	Yakubenya, S.M. (1991) Manganese Ion Properties in Silicon: Interstitial Defects. Physica Tverdogo Tela, 33, 1462-1469.
[11]	Yakubenya, S.M. (1991) Manganese Ion Properties in Silicon: Substitution and Pairing Defects. Physica Tverdogo Tela, 33, 1470-1477.
[12]	Grigo’ev, I.S. and Meilikhov, E.Z. (1991) Handbook of Physical Values. Energoatomizdat, Moscow.
[13]	Buonassisi, T., Heuer, M., Istratov, A.A., Pickett, M.D., Marcus, M.A., Lai, B., Cai, Z., Heald, S.M. and Weber, E.R. (2007) Transition Metal Co-Precipitation Mechanisms in Silicon. Acta Materialia, 55, 6119-6126. http://dx.doi.org/10.1016/j.actamat.2007.07.030
[14]	Istratov, A.A., Hieslmair, H. and Weber, E.R. (1999) Iron and Its Complexes in Silicon. Applied Physics A, 69, 13-44. http://dx.doi.org/10.1007/s003390050968
[15]	Czaputa, R., Feichtinger, H., Oswald, J., Sitter, H. and Haider, M. (1985) Energy Level of the 0 to + Charge Transition of Substitutional Manganese in Silicon. Physical Review Letters, 55, 758-761. http://dx.doi.org/10.1103/PhysRevLett.55.758
[16]	Haider, M., Sitter, H., Czaputa, R., Feichtinger, H. and Oswald, J. (1987) Experimental Identification of the Energy Level of Substitutional Manganese in Silicon. Journal of Applied Physics, 62, 3785-3789. http://dx.doi.org/10.1063/1.339217
[17]	Graff, K. (1995) Metal Impurities in Silicon-Device Fabrication. Springer, Berlin. http://dx.doi.org/10.1007/978-3-642-97593-6
[18]	Carlson, R.O. (1956) Properties of Silicon Doped with Manganese. Physical Review, 104, 937-940. http://dx.doi.org/10.1103/PhysRev.104.937
[19]	Ludwig, G.W. and Woodbury, H.H. (1962) Electron Paramagnetic Resonance in Solid State Physics, Vol. 13, Academic Press, New York.
[20]	Baraff, G.A., Kane, E.O. and Schlüter, M. (1980) Theory of the Silicon Vacancy: An Anderson Negative-U System. Physical Review B, 21, 5662-5683. http://dx.doi.org/10.1103/PhysRevB.21.5662
[21]	Newton, J.L., Chatterjee, A.P., Harris, R.D. and Watkins, G.D. (1983) Negative-U Properties of the Lattice Vacancy in Silicon. Physica B + C, 116, 219-223. http://dx.doi.org/10.1016/0378-4363(83)90250-4
[22]	Radtsig, A.A. and Smirnov, B.M. (1986) Handbook of Atom Characteristic and Atomic Ions. Energoatomizdat, Moscow.
[23]	Abragam, A. and Bleaney, B. (1970) Electron Paramagnetic Resonance of Transition Ions. Clarendon Press, Oxford.
[24]	Andrianov, D.G., Lazareva, G.V., Savel’ev, A.S. and Yakubenya, S.M. (1983) Magnetic Properties of GaAs:Mn. Phizica I Tekhika Poluprovodnicov, 17, 813-817.
[25]	Il’in, N.P., Masterov, V.F. and Vasil’ev, A.E. (1992) Impurity Centers with Incompletely Filling 3d-Shell in Binary Compound. Phizica I Tekhika Poluprovodnicov, 26, 1866-1877.
[26]	Schneider, J., Kaufmann, U., Wilkening, W., Baeumler, M. and K?hl, F. (1987) Electronic Structure of the Neutral Manganese Acceptor in Gallium Arsenide. Physical Review Letters, 59, 240-244. http://dx.doi.org/10.1103/PhysRevLett.59.240
[27]	Yakubenya, S.M. (1997) Paramagnetic Resonance in Manganese Impurity Centers in GaAs:Mn. Journal of the Moscow Physical Society, 7, 273-286.
[28]	Bersuker, I.B. (1983) The Jahn-Teller Effect. Plenum, New York.
[29]	Bersuker, I.B. and Polinger, V.Z. (1982) Vibronic Interactions and the Jahn-Teller Effect. In: Lowdin, P.-O., Ed., Advances in Quantum Chemistry, Vol. 15, Academic Press, New York, 85-160.
[30]	Alexsandrov, P.A. and Yakubenya, S.M. (1990) Method of Spin Marking in Semiconductors. In: Sumino, K., Ed., Proceeding of International Conference IC—STDCS, Elsevier Science Publishers B.V., Amsterdam, 1605-1608.
[31]	Pfleiderer, C., McMullan, G.J., Julian, S.R. and Lonzarich, G.G. (1997) Magnetic Quantum Phase Transition in MnSi under Hydrostatic Pressure. Physical Review B, 55, 8330. http://dx.doi.org/10.1103/PhysRevB.55.8330
[32]	Oh, S.J., Allen, J.W. and Lawrence, J.M. (1987) Electron Spectroscopy Study of FeSi and CoSi. Physical Review B, 35, 2267-2276. http://dx.doi.org/10.1103/PhysRevB.35.2267
[33]	Ishikawa, Y., Shirane, G., Tarvin, J.A. and Kohgi, M. (1977) Magnetic Excitations in the Weak Itinerant Ferromagnet MnSi. Physical Review B, 16, 4956-4961. http://dx.doi.org/10.1103/PhysRevB.16.4956
[34]	Shirane, G., Cowley, R., Majkrzak, C., Sokoloff, J.B., Pagonis, B., Perry, C.H. and Ishikawa, Y. (1983) Spiral Magnetic Correlation in Cubic MnSi. Physical Review B, 28, 6251-6256. http://dx.doi.org/10.1103/PhysRevB.28.6251
[35]	Stishov, S.M., Petrova, A.E., Khasanov, S., Panova, G.Kh., Shikov, A.A., Lashley, J.C., Wu, D. and Lograsso, T.A. (2007) Magnetic Phase Transition in the Itinerant Helimagnet MnSi: Thermodynamic and Transport Properties. Physical Review B, 76, 52405-52412. http://dx.doi.org/10.1103/PhysRevB.76.052405
[36]	Ziebeck, K.R.A. and Brown, P.J. (1980) Measurement of the Paramagnetic Response Function in the Weak Itinerant Magnetic Compound MnSi Using Polarised Neutron Scattering. Journal of Physics F: Metal Physics, 10, 2015-2019. http://dx.doi.org/10.1088/0305-4608/10/9/017
[37]	Ziebeck, K.R.A., Brown, P.J., Booth, J.G. and Bland, J.A.C. (1981) Observation of Spatial Magnetic Correlations in the Paramagnetic Phase of Weak Ferromagnets; Short-Range Magnetic Order in MnSi at 20 TN. Journal of Physics F: Metal Physics, 11, L127-L131. http://dx.doi.org/10.1088/0305-4608/11/6/002