Deep Level Transient Spectroscopy of AlGaInP LEDs

M. Atiq^1,2, Nazir A. Naz¹, Akbar Ali^1,2*

¹Department of Applied Physics, Federal Urdu University of Arts, Science and Technology, Islamabad, Pakistan.
²Department of Basic Sciences, Riphah International University, Islamabad, Pakistan.

DOI: 10.4236/jmp.2014.518203                

Abstract

Deep level transient spectroscopy (temperature scans) of AlGaInP based red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were observed. Of these, five defects assigned to energy states 0.21, 0.22, 0.24, 0.26, and 0.24 eV were characterized. Respective capture cross-sections, measured at infinite temperature (T = ∞), QUOTE were found to be 8.84 × 10^-16, 6.98 × 10^-16, 7.86 × 10^-16, 9.9 × 10^-16 and 2.1 × 10^-16 cm². Corresponding concentrations of defects were 3.7 × 10¹³, 3.5 × 10¹³, 3.2 × 10¹³, 3.3 × 10¹³ and 3.1 × 10¹³ cm^-3.

Keywords

Semiconductors, MOCVD, Defects, DLTS

Conflicts of Interest

The authors declare no conflicts of interest.

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