Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate

Abstract

GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have been analyzed. The photoluminescence (PL) peaks have been observed at 428.1 nm 426.1 nm for the epitaxial layers on SSP and PSS respectively. The PL intensity is 2.9 times higher in the case of PSS. The electroluminescence (EL) peaks have been observed at 430.78 nm and 430.35 nm for the LEDs on SSP and PSS respectively. The light output from LED fabricated on the PSS is 2.15 times higher than that of the LED on SSP at a forward current of 100 mA.

Keywords

LED, GaN/InGaN, PSS

Share and Cite:

Adhikari, S. , Patra, S. , Lunia, A. , Kumar, S. , Parjapat, P. , Kushwaha, B. , Kumar, P. , Singh, S. , Chauhan, A. , Singh, K. , Pal, S. and Dhanavantri, C. (2014) Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate. Journal of Applied Mathematics and Physics, 2, 1113-1117. doi: 10.4236/jamp.2014.212129.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] Tadatomo, K., Okagawa, H., Ohuchi, Y., Tsunekawa, T., Jyouichi, T., Imada, Y., et al. (2001) High Output Power In-GaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy. Physica Status Solidi (a), 188, 121-125. http://dx.doi.org/10.1002/1521-396X(200111)188:1<121::AID-PSSA121>3.0.CO;2-G
[2] Chang, S.J., Lin, Y.C., Su, Y.K., Chang, C.S., Wen, T.C., Shei, S.C., et al. (2003) Nitride-Based LEDs Fabricated on Patterned Sapphire Substrates. Solid-State Electronics, 47, 1539-1542. http://dx.doi.org/10.1016/S0038-1101(03)00073-X
[3] Feng, Z.H., Qi, Y.D., Lu, Z.D. and Lau, K.M. (2004) GaN-Based Blue Light-Emitting Diodes Grown and Fabricated on Patterned Sapphire Substrates by Metalorganic Vapor-Phase Epitaxy. Journal of Crystal Growth, 272, 327-332. http://dx.doi.org/10.1016/j.jcrysgro.2004.08.070
[4] Kao, C.-C., Su, Y.-K., Hsieh, Y.-T., Lee, Y.-C., Cheng, C.-Y. and Lin, C.-L. (2011) Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography. Applied Physics Express, 4, 062102-062104. http://dx.doi.org/10.1143/APEX.4.062102
[5] Yamada, M., Mitani, T., Narukawa, Y., Shioji, S., Niki, I., Sonobe, S., et al. (2002) InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode. Japanese Journal of Applied Physics, 41, L1431-L1433. http://dx.doi.org/10.1143/JJAP.41.L1431
[6] Yu, S.-F., Chang, S.-P., Chang, S.-J., Lin, R.-M., Wu, H.-H. and Hsu, W.-C. (2012) Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights. Journal of Nanomaterials, 2012. http://dx.doi.org/10.1155/2012/346915
[7] Moram, M.A. and Vickers, M.E. (2009) X-Ray Diffraction of III-Nitrides. Reports on Progress in Physics, 72, Article ID: 036502. http://dx.doi.org/10.1088/0034-4885/72/3/036502

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