Electrical Properties of CuO-Doped PZT-PZN-PMnN Piezoelectric Ceramics Sintered at Low Temperature

Phan Dinh Gio^1*, Le Dai Vuong^{1, 2}, Ho Thi Thanh Hoa¹

¹Department of Physics, College of Sciences, Huê University, Huê, Vietnam.
²Faculty of Chemical and Environmental Engineering, Huê Industry College, Huê, Vietnam.

DOI: 10.4236/msce.2014.211004                

Abstract

The 0.8Pb(Zr_0.48Ti_0.52)O₃-0.125Pb(Zn_1/3Nb_2/3)O₃-0.075Pb(Mn_1/3Nb_2/3)O₃ (PZT-PZN-PMnN) + x wt% CuO piezoelectric ceramics, where x = 0.0, 0.05, 0.075, 0.10, 0.125, 0.150, and 0.175, have been fabricated by the conventional solid-state reaction method and the B-site Oxide mixing technique (BO). The effect of CuO on the sinterability, structure, and electrical properties of PZT-PZN-PMnN ceramics was systematically studied. The CuO addition significantly reduced the sintering temperature of the ceramics from 1150^°C to 850^°C. Experimental results showed that with the doping of CuO, all the ceramics could be well sintered and exhibit a dense, pure perovskite structure. The specimen containing 0.125 wt% CuO sintered at 850^°C showed the good electrical properties: the density of 7.91 g/cm³; the electromechanical coupling factor, k_p = 0.55 and k_t = 0.46; the dielectric constant, ε = 1179; the dielectric loss (tand) of 0.006; the mechanical quality factor (Q_m) of 1174; the piezoelectric constant (d₃₁) of 112 pC/N.

Keywords

Crystal Structure, Dielectric, Piezoelectric Constant, Mechanical Quality Factor

Conflicts of Interest

The authors declare no conflicts of interest.

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