On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors)

Gulmurza Abdurakhmanov

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DOI: 10.4236/wjcmp.2011.12004                

Abstract

The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.

Keywords

Lead-Silicate Glass, Thick Film Resistors, Percolation Levels, Doping, Conductivity, Firing Conditions

Conflicts of Interest

The authors declare no conflicts of interest.

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