[1]
|
Kalem, S. and Yavuzcetin, O. (2000) Possibility of Fabricating Light-Emitting Porous Silicon from Gas Phase Etchants. Optics Express, 6, 7-11. http://dx.doi.org/10.1364/OE.6.000007
|
[2]
|
Vinod, M.P. and Vijayamohanan, K. (1996) Silicon Based Light Emitting Gels. Applied Physics Letters, 68, 81. http://dx.doi.org/10.1063/1.116765
|
[3]
|
Aouida, S., Saadoum, M., Saad, K.B. and Bessaïs, B. (2006) Phase Transition and Luminescence Properties from Vapor Etched Silicon. Thin Solid Films, 495, 357-360. http://dx.doi.org/10.1016/j.tsf.2005.08.235
|
[4]
|
Canham, L.T. (1990) Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers. Applied Physics Letters, 57, 1046. http://dx.doi.org/10.1063/1.103561
|
[5]
|
Kumar, P., Lemmens, P., Ghosh, M., Ludwi, F. and Schilling, M. (2009) Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon. Journal of Nanomaterials, 18, Article ID: 727957, 7.
|
[6]
|
Kabbi, H., Miliki, N., Cheynet, M., Saikalay, W., Gibbert, D., Bassïs, B., Yangui, B. and Charï, A. (2006) Structural and Optical Properties of Vapour-Etching Based Porous Silicon. Crystal Research and Technology, 41, 154-162. http://dx.doi.org/10.1002/crat.200510548
|
[7]
|
Sudesh, T.L., Wijesinghe, L., Li, S.Q., Breese, M.B.H. and Blackwood, D.J. (2009) High Resolution TEM and Triple-Axis XRD Investigation into Porous Silicon Formed on Highly Conducting Substrates. Electrochemica Acta, 54, 3671-3676.
|
[8]
|
Rachwal, J.D. (2010) Thesis on X-Ray Diffraction Applications in Thin Films and (100) Silicon Substrate Stress Analysis. University of South Florida, Tampa.
|
[9]
|
Dulov, E.N. and Khripunov, D.M. (2007) Voigt Lineshape Function as a Solution of the Parabolic Partial Differential Equation. Journal of Quantitative Spectroscopy and Radiative Transfer, 107, 428 p.
|
[10]
|
Parrish, W. and Langford, J.I. (2004) International Tables for Crystallography Volume C: Mathematical, Physical and Chemical Tables. International Tables for Crystallography, 200, 42 p.
|
[11]
|
Aouida, S., Saadoum, M., Saad, B.K. and Bessaïs, B. (2006) Phase Transition and Luminescence Properties from Vapor Etched Silicon. Thin Solid Films, 495, 357. http://dx.doi.org/10.1016/j.tsf.2005.08.235
|
[12]
|
Lauerhaas, J.M. and Sailor, M.J. (1993) Chemical Modification of the Photoluminescence Quenching of Porous Silicon. Science, 261, 1567-1568. http://dx.doi.org/10.1126/science.261.5128.1567
|
[13]
|
Boonekamp, E.P., Kelly, J.J. and Sandag, A. (1994) The Chemical Oxidation of Hydrogen-Terminated Silicon (111) Surfaces in Water Studied in Situ with Fourier Transform Infrared Spectroscopy. Journal of Applied Physics, 75, 8121. http://dx.doi.org/10.1063/1.356510
|
[14]
|
Mehta, B.R., Sahay, M.K., Malhotra, L.K., Avasthi, D.K. and Soni, R.K. (1996) High Energy Heavy Ion Induced Changes in the Photoluminescence and Chemical Composition of Porous Silicon. Thin Solid Films, 289, 95-98. http://dx.doi.org/10.1016/S0040-6090(96)08937-7
|
[15]
|
Gole, J.L. and Dixon, D.A. (1998) Potential Role of Silanones in the Photoluminescence-Excitation, Visible Photoluminescence-Emission, and Infrared Spectra of Porous Silicon. Physical Review B, 57, 12002. http://dx.doi.org/10.1103/PhysRevB.57.12002
|