The Study of Relaxation Time in Test of 940 nm Semiconductor Laser

Jiachun Li; Jianjun Li; Tao Liu; Bifeng Cui; Jun Deng; Jun Han; Linjie He; Shengjie Lin

doi:10.4236/jcc.2013.17011

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Journal of Computer and Communications > Vol.1 No.7, December 2013

The Study of Relaxation Time in Test of 940 nm Semiconductor Laser ()

Jiachun Li, Jianjun Li, Tao Liu, Bifeng Cui, Jun Deng, Jun Han, Linjie He, Shengjie Lin

Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Beijing, China..

DOI: 10.4236/jcc.2013.17011 PDF HTML 3,045 Downloads 4,498 Views Citations

Abstract

Conventional test of the peak wavelength of a laser used to be applied immediately after a device is injected current. However, the results can not be considered as an accurate description to temperature characteristic. This passage puts forward a concept of relaxation time in wavelength texts, mainly based on the experiment of 940 nm strain quantum well laser, confirming that under constant current, wavelength will get through a process of rising, and then, reach the limit. This process brings the effect on spectral characteristics of a device which cannot be ignored and the accumulated heat in relaxation time will gradually impact the emission wavelength of the laser, even crest split to form bimodal phenomenon.

Keywords

Semiconductor Laser; Test; Temperature Characteristics; Relaxation Time

Share and Cite:

Li, J. , Li, J. , Liu, T. , Cui, B. , Deng, J. , Han, J. , He, L. and Lin, S. (2013) The Study of Relaxation Time in Test of 940 nm Semiconductor Laser. Journal of Computer and Communications, 1, 46-49. doi: 10.4236/jcc.2013.17011.

Conflicts of Interest

The authors declare no conflicts of interest.

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