Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

Viranjay M. Srivastava, Kalyan S. Yadav, Ghanashyam Singh

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DOI: 10.4236/wet.2011.21003                

Abstract

In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.

Keywords

Capacitive Model, Double-Gate MOSFET, DP4T Switch, Isolation, Radio Frequency, RF Switch, S-Parameter and VLSI

Conflicts of Interest

The authors declare no conflicts of interest.

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