The Influence of Ultrasonic Treatment on the Properties of Schottky Diodes

I. G. Pashayev

Physical Faculty, Chair of Physical Electronics, The Baku State University, Baku, Azerbaijan.

DOI: 10.4236/oja.2013.33A002                

Abstract

The given work studies the reason of the change of a superfluous current near crystallization temperature of an amorphous αPbSb metal alloy and at the same time founds out the influence of ultrasonic processing (USP) on the properties of αPbSb-nSi solar elements (SE), made by Shottki diodes technology (ShD) with a metal alloy. It is found that occurrence of a superfluous current αPbSb-nSi ShD under the influence of thermoannealing is connected with changes of structure of an amorphous film of metal at transition in a polycrystalline condition. VAC damaged αPbSb-nSi Sh Dare very sensitive to annealing time. Eventually, even at room temperature, level of a superfluous current decreases, i.e. “the wound” put by mechanical damage sort of heals, restoration process occurs the faster, the higher the annealing temperature is. Function of γ_t annealing parameters changes in an interval and the influence USP on photo-electric properties αPbSb-nSi SE depends on the chosen UIT mode.

Keywords

Photosensitivity; Barrier Properties; Amorphous Metals; Diodes Shottki; Superfluous Currents; Degradations; Ultrasonic Influence; Silicon Solar Elements

Conflicts of Interest

The authors declare no conflicts of interest.

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