Base Width Variations and its Effects on Frequency  Response of Double Hetero-structure Long Wavelength Transistor Laser

Mohammad Reza Farjadian; Hassan Kaatuzian; Iman Taghavi

doi:10.4236/opj.2013.32B058

Home > Journals > Chemistry & Materials Science | Engineering > OPJ

Optics and Photonics Journal > Vol.3 No.2B, June 2013

Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser ()

Mohammad Reza Farjadian, Hassan Kaatuzian, Iman Taghavi

Photonics Research Laboratory (PRL), Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran.

DOI: 10.4236/opj.2013.32B058 PDF HTML 3,672 Downloads 4,936 Views

Abstract

In this paper we investigate the effects of base width variation on performance of long wavelength transistor laser. In our structure with increasing the base width, the cut off frequency increases until 367 nm with 24.5 GHz and then abruptly fall. In 100 nm base width, we have 17.5 GHz cut off frequency, and overall ac performances become optimized, although, other parameters like optical losses and threshold current density are not optimized.

Keywords

Transistor Laser; Quantum Well; Long Wavelength; Optical Confinement Factor

Share and Cite:

M. Reza Farjadian, H. Kaatuzian and I. Taghavi, "Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser," Optics and Photonics Journal, Vol. 3 No. 2B, 2013, pp. 248-251. doi: 10.4236/opj.2013.32B058.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	H. Kaatuzian, “Photonics” 2nd Edition, Amirkabir University of Technology Press, 2009.
[2]	I. Taghavi and H. Kaatuzian, “Optical Bandwidth Optimization in a Transistor Laser by Quantum Well Location Effect,” Symposium on Photonics and Optoelectronic, 2010.
[3]	N. Holonyak, Jr. and M. Feng, “The Transistor Laser” IEEE Spectrum, Vol. 43, No. 2, 2006, pp 50-55. doi:10.1109/MSPEC.2006.1584362
[4]	H. Kaatuzian, “Photonics” Vol. 1, Amirkabir University of Technology Press, 2005.
[5]	Y. Huang, J. H. Ryou and R. D. Dupuis “Epitaxial Structure Of Long – Wavelength InAlGaAs/InP Transistor Laser,” IEEE Jurnal of Quantum electronic, Vol. 47, NO. 5, 2011.
[6]	L. Zhang, J. P. Leburton, “Modeling of the Transient Characteristics of Heterojunction Bipolar Transistor Lasers” IEEE Journal of Quantum Electron, Vol.45, No.4, 2009,pp. 359-366. doi:10.1109/JQE.2009.2013215
[7]	H. R. Mojaver, H. Kaatuzian “Analysis and Improvment of Optical Frequency Response in Long Wavelength Transistorlaser” Springer Science. dio:10.1007/s11082-011-9531-2.
[8]	W. Liu “Fundamentals of III-V devices”, John Wiley & sons, 1999.
[9]	W. Streifer, D. R. Scifres and R. D. Burnham “Optiacal Analysis of Multiple – quantum – well lasers” Optical Society of Amrica, 1979.