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J. Hommel, M. Moser, M. Geiger, F. Scholz and H. Schwiser, “Investigations of Dry Etching in AlGaInP/GaInP Using CCl2F2/Ar Reactive Ion Etching and Ar Ion Beam Etching,” Journal of Vacuum Science & Technology B, Vol. 9, No. 6, 1991, pp. 3526-3529. doi:10.1116/1.585837
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F. Frost, A. Schindler and F. Bigl, “Reactive Ion Beam Etching of InSb and InAs with Ultrasmooth Surfaces,” Semiconductor Science and Technology, Vol. 13, 1998, pp. 523-527. doi:10.1088/0268-1242/13/5/014
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Bharadwaj, L. M., Bonhomme, P., Faure, J., Balossier, G., and Bajpai, R. P., “Chemically Assisted Ion Beam Etching of InP and InSb using Reactive Flux of Iodine and Ar+ Beam,” Journal of Vacuum Science & Technology B, Vol. 9, No. 3, 1991, pp. 1440-1444.
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S. Bouchoule, L. Vallier, T. Chevolleau and C. Cardinaud, “Effect of Cl2- and HBr-based Inductively Coupled Plasma Etching on InP Surface Composition Analyzed Using in Situ X-Ray Photoelectron Spectroscopy,” Journal of Vacuum Science & Technology A, Vol. 30, No. 3, 2012, pp. 31301-31312.
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[13]
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J. Hommel, M. Moser, M. Geiger, F. Scholz and H. Schwiser, “Investigations of Dry Etching in AlGaInP/GaInP Using CCl2F2/Ar Reactive Ion Etching and Ar Ion Beam Etching,” Journal of Vacuum Science & Technology B, Vol. 9, No. 6, 1991, pp. 3526-3529. doi:10.1116/1.585837
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[14]
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J. W. Lee, J. Hong, C. R. Abernathy, E. S. Lambers, S. J. Pearton, W. S. Hobson and F. Ren,“Cl2/Ar Plasma Etching of Binary, Ternary, and Quaternary In-Based Compound Semiconductors,” Journal of Vacuum Science & Technology B, Vol. 14, No. 4, 1996, pp. 2567-2573. doi:10.1116/1.588769
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[15]
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S. Allen and P. Silverberg, “Methane-Hydrogen III-V Metal-Organic Reactive Ion Etching,” Semiconductor Science and Technology, Vol. 6, 1991, pp. 287-289. doi:10.1088/0268-1242/6/4/010
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[16]
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J. W. Mcnabb, H. G. Craighead, H. Temkin and R. A. Logan, “Anisotropic Rective Ion Etching of InP in Methane/Hydrogen Based Plasmas,” Journal of Vacuum Science & Technology B, Vol. 9, No. 6, 1991, pp. 3535-3537. doi:10.1116/1.585839
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B. Cakmak, T. Karacali and M. Biber, “Investigation of Q-Switched InP-Based 1550 nm Semiconductor Lasers,” Optics and Laser Technology, Vol. 44, 2012, pp. 1593-1597. doi:10.1016/j.optlastec.2011.11.043
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