Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations

Ahmadreza Daraei, Seyed Mohsen Izadyar, Naser Chenarani

Department of Physics, Faculty of Science, University of Sistan and Baluchestan, Zahedan, Iran.
Nano-Technology Group, Department of Chemical Engineering, Amirkabir University of Technology, Tehran, Iran.

DOI: 10.4236/opj.2013.31018                

Abstract

In this paper, simulation of InAs/GaAs quantum dot (QD) laser is performed based upon a set of eight rate equations for the carriers and photons in five energy states. Carrier dynamics in these lasers were under analysis and the rate equations are solved using 4th order Runge-Kutta method. We have shown that by increasing injected current to the active medium of laser, switching-on and stability time of the system would decrease and power peak and stationary power will be increased. Also, emission in any state will start when the lower state is saturated and remain steady. The results including P-I characteristic curve for the ground state (GS), first excited state (ES1), second excited state (ES2) and output power of the QD laser will be presented.

Keywords

InAs/GaAs Quantum Dot Laser; Simulation; Carrier Dynamics; 4th Order Runge-Kutta Method

Conflicts of Interest

The authors declare no conflicts of interest.

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