Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures

DOI: 10.4236/msa.2012.312122   PDF   HTML   XML   3,732 Downloads   5,708 Views   Citations

Abstract

GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.

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X. Song, X. Zeng, J. Zhang, Y. Jin and X. Meng, "Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures," Materials Sciences and Applications, Vol. 3 No. 12, 2012, pp. 838-842. doi: 10.4236/msa.2012.312122.

Conflicts of Interest

The authors declare no conflicts of interest.

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