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Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV

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DOI: 10.4236/jemaa.2010.26046    6,436 Downloads   11,678 Views  

ABSTRACT

The thickness and spectral dependence of the complex refractive index of upper layer in thin-film MBE-grown GaAs heterostructures were calculated basing on an classical oscillatory model of dielectric function from spectra measured by spectroscopic ellipsometry (nondestructive, contactless optical method) in the range of 1.5-4.75 eV.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

S. Svitasheva, "Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV," Journal of Electromagnetic Analysis and Applications, Vol. 2 No. 6, 2010, pp. 357-361. doi: 10.4236/jemaa.2010.26046.

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