Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

Iikham G. Atabaev, Tojiddin M. Saliev, Erkin N. Bakhranov, Dilmurad Saidov, Khimmatali Juraev, Chin C. Tin, Victor Adedeji, Bakhtiyar G. Atabaev, Nilufar G. Saidkhanova

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DOI: 10.4236/msa.2010.12010                

Abstract

Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology.

Keywords

Diffusion, Activation Energy, Silicone Carbide, Annealing, Vacancy

Conflicts of Interest

The authors declare no conflicts of interest.

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