In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

Abstract

The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.

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H. Yeritsyan, A. Sahakyan, S. Nikoghosyan, V. Harutyunyan, K. Ohanyan, N. Grigoryan, E. Hakhverdyan, A. Hovhannisyan, V. Sahakyan, K. Movsisyan and A. Hovhannisyan, "In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation," Journal of Modern Physics, Vol. 3 No. 5, 2012, pp. 383-387. doi: 10.4236/jmp.2012.35053.

Conflicts of Interest

The authors declare no conflicts of interest.

References

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