DC Conductivity and Dielectric Behaviour of Glassy Se100–xZnx Alloy

Abstract

The DC conductivity and dielectric properties of glassy Se100–xZnx 2 ≤ x ≤ 20 alloys have been investigated in the temperature range 303 - 487 K with frequency range 100 Hz – 1 MHz. It is observed that DC conductivity decreases and the activation energy increases with Zn content in Se-Zn system. Dielectric dispersion is observed when Zn incorporated in Se-Zn glassy system. The results are explained on the basis of DC conduction mechanism and dipolar-type dielectric dispersion.

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M. Nasir and M. Zulfequar, "DC Conductivity and Dielectric Behaviour of Glassy Se100–xZnx Alloy," Open Journal of Inorganic Non-metallic Materials, Vol. 2 No. 2, 2012, pp. 11-17. doi: 10.4236/ojinm.2012.22002.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] E. Maruyama, “Amorphous Built-in-Field Effect Photo- recep-tors,” Japanese Journal of Applied Physics, Vol. 21, No. 2, 1982, pp. 213-223. doi:10.1143/JJAP.21.213
[2] D. C. Hunt, S. S .Kirby and J. A .Rowland, “X-Ray Im- aging with Amorphous Selenium: X-Ray to Charge Con- version Gain and avalanche Multiplication Gain,” Medi- cal Physics, Vol. 9, No. 11, 2002, pp. 2459-2464.
[3] S. O. Kasap, “Imaging Materials,” Marcel Dekker, New York, 1991, pp. 350-355.
[4] V. I. Mikla, Yu. Nagy, V. V. Mikla and A. V. Mateleshko, “The Effect of Sb Alloying on the Electro Photographic Properties of Amorphous Selenium,” Materials Science and Engineering B, Vol. 64, No.1, 1999, pp. 1-8.
[5] N. Chaudhary and A. Kumar, “Dielectric Relaxation in Glassy Se100–xSbx,” Turkish Journal of Physics, Vol. 29, No. 3, 2005, pp. 119-125.
[6] K. W. Boer and S. R. Ovshinsky, “Electrothermal Initia- tion of an Electronic Switching Mechanism in Semicon- ducting Glasses,” Journal of Applied Physics, Vol. 41, No. 6, 1970, pp. 2675-2681. doi:10.1063/1.1659281
[7] F. M. Collins, “Switching by Thermal Avalanche in Semi- con-ducting Glass Film,” Journal of Non-Crystalline Sol- ids, Vol. 2, 1970, pp. 496-503. doi:10.1016/0022-3093(70)90163-8
[8] N. F. Mott and E. A. Davis, “Conduction in Non-Crys- talline systems,” Philosophical Magazine, Vol. 22 No. 179, 1970, pp. 903-922.
[9] M. Kastner and H. Fritzsche, “Defect Chemistry of Lone- Pair Semiconductors,” Philosophical Magazine Part B, Vol. 37, No. 2, 1978, pp. 199-215.
[10] doi:10.1080/01418637808226653 D. R. Goyal, S. Walker and K. K. Srivastava, “Errors Due to Lack of Contact in Measurements of Dielectric Relaxa- tion Parameters for Solid Powders,” Physica Status Solidi (a), Vol. 64, No. 1, 1981, pp. 351-357. doi:10.1002/pssa.2210640138
[11] M. Kitao, K. Yoshii and S. Yamada, “Thermoelectric Po- wer of Glassy As40Se60–xTex,” Physica Status Solidi (a), Vol. 91, No. 1, 1985, pp. 271-277. doi:10.1002/pssa.2210910133
[12] A. B. Gadkari and J. K. Zope, “Electrical Properties of Amor-phous Semiconducting Se-Te-In System,” Journal of Non-Crystalline Solids, Vol. 103, No. 2-3, 1988, pp. 295-299. doi:10.1016/0022-3093(88)90208-6
[13] N. F. Mott, “Conduction in Non-Crystalline Systems IV. Anderson Localization in a Disordered Lattice,” Philoso- phical Magazine, Vol. 22, No. 175, 1970, pp. 7-29. doi:10.1080/14786437008228147
[14] S. Kumar, R. Arora and A. Kumar, “Space Charge Lim- ited Conduction in a-Ge22Se68M10 (M = Cd, ln, Pb, Te),” Journal of Electronic Materials, Vol. 22, No. 6, 1993, pp. 675-679. doi:10.1007/BF02666416
[15] R. Mach, P. Flgel and L. G. Suslina, “The Influence of Compo-sitional Disorder on Electrical and Optical Properties of ZnSxSe1?x Single Crystals,” Physica Status Solidi (b), Vol. 109, No. 2, 1982, pp. 607-615. doi:10.1002/pssb.2221090219
[16] H. Mitsubas, I. Mituishi and M. Mizuta, “Coherent Growth of ZnSe on GaAs by MOCVD,” Japanese Journal of Ap- plied Physics, Vol. 24, 1985, pp. 578-580.
[17] J. Schottmiller, M. Tabak, G. Lucovsky and A. Ward, “The Ef-fect of Valency on Transport Properties in Vitreous Binary Alloys of Selenium,” Journal of Non-Crystalline Solids, Vol. 4, 1970, pp. 80-96. doi:10.1016/0022-3093(70)90024-4
[18] N. Musahwar, M. A. Majeed Khan, M. Husain and M. Zulfequar, “Dielectric and Electrical Properties of Se-S Glassy Alloys,” Physica B, Vol. 396, No. 1-2, 2007, pp. 81-86. doi:10.1016/j.physb.2007.03.014
[19] S Kumar, M. Husain and M. Zulfequar, “Effect of Silver on Dielectric Properties of the Se-Te System,” Physica B, Vol. 371, No. 2, 2006, pp. 193-198. doi:10.1016/j.physb.2005.09.021
[20] S. Kumar, M. Husain and M. Zulfequar, “Dielectric Re- laxation in the Glassy a-Se-Te-Ga system,” Physica B, Vol. 387, No. 1-2, 2007, pp. 400-408. doi:10.1016/j.physb.2006.04.036
[21] M. Ilyas, M. Zulfequar and M. Husain, “Anomalous Dielectric Behaviour in a-GaxTe100–x Alloys (0 ? x ? 10),” Physica B, Vol. 271, No. 1-4, 1999, pp. 125-135. doi:10.1016/S0921-4526(99)00221-5
[22] R. S. Kundu, K. L. Bhatia, N. Kishore and P. Singh, “Ef- fect of Addition of Zn Impurities on the Electronic Con- duction in Semiconducting Se80?xTe20Znx Glasses,” Phi- losophical Magazine Part B, Vol. 72, No. 5, 1995, pp. 513-528.
[23] R. Arora and A. Kumar, “Dielectric Relaxation in Glassy Se and Se100–xTex Alloys,” Physica Status Solidi (a), Vol. 115, No. 1, 1989, pp. 307-314. doi:10.1002/pssa.2211150135
[24] J. C. Guintini, J. V. Zanchetta, D. Jullien, R. Eholie and P. Houenou, “Temperature Dependence of Dielectric Losses in Chalcogenide Glasses,” Journal of Non-Crystalline Sol- ids, Vol. 45, No. 1, 1981, pp. 57-62. doi:10.1016/0022-3093(81)90089-2
[25] S. R. Elliott, “A Theory of a.c. conduction in Chalcoge- nide Glasses,” Philosophical Magazine, Vol. 36, No .6, 1977, pp. 1291-1304.
[26] A. E. Stern and H. Eyring, “The Deduction of Reaction Mecha-nisms from the Theory of Absolute Rates,” Jour- nal of Chemi-cal Physics, Vol. 5, No. 2, 1937, pp. 113-113. doi:10.1063/1.1749988
[27] S. Glasstone, K. J. Laidler and H. Eyring, “Theory of Rate Processes,” McGraw Hill, New York, 1941.
[28] P. Pollak and G. E. Pike, “A General Treatment of 1-Di- men-sional Hopping Conduction,” Physical Review Let- ters, Vol. 28, No. 28, 1972, pp. 1449-14450. doi:10.1103/PhysRevLett.28.1449
[29] M. M. Malik, M. Zulfequar, A. Kumar and M. Husain, “Effect of Indium Impurities on the Electrical Properties of Amorphous Ga30Se70,” Journal of Physics: Condensed Matter, Vol. 4, No. 43, 1992, pp. 8331-8338. doi:10.1088/0953-8984/4/43/008
[30] M. Zulfequar, A. Kumar, “Dielectric Behavior of Hot- Pressed AIN Ceramic: Effect of CaO Additive,” Journal of Electro-chemical Society, Vol. 136, No. 4, 1989, pp. 1099-1102. doi:10.1149/1.2096792
[31] M. Zulfequar and A. Kumar, “Electrical Conductivity and Di-electric Behavior of Hot-Pressed AlN,” Advanced Ce- ramic Matter, Vol. 3, No. 4, 1988, pp. 332-336.

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