Share This Article:

Estimation the Density of Localized State Glassy Se100–xZnx Thin Films by Using Space Charge Limited Conduction Measurement

Abstract Full-Text HTML Download Download as PDF (Size:877KB) PP. 91-97
DOI: 10.4236/njgc.2012.22013    3,697 Downloads   6,562 Views   Citations


The dc conductivity in vacuum evaporated amorphous thin films of the glassy alloys Se100–xZnx(2 ≤ x ≤ 20) are meas-ured in the temperature range (308 - 388 K). The dc conductivity (σdc) is increases with increased of Zn concentration in the glassy alloys. The activation energy (ΔE) decreases with increase of Zn content. The conduction is explained on the basis of localized state in the mobility gap. To study the effect of electric field, a Current-Voltage characteristic has been measured at various fixed temperatures. The Current-Voltage data are fitted into the theory of space charge limited conduction in case of uniform distribution of traps in mobility gap at high electric fields (E ~104 V/cm) of these materials. The density of localized state (g0) are estimated by fitting in theory of space charge limited conduction (SCLC) at the temperature range of (352 - 372 K) in the glassy Se100–xZnx. The density of localized state (0) near the Fermi level are increases with increase of Zn concentration in the (Se100–xZnx) thin films and explain on the basis of increase of the Zn-Se bond.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

M. Nasir and M. Zulfequar, "Estimation the Density of Localized State Glassy Se100–xZnx Thin Films by Using Space Charge Limited Conduction Measurement," New Journal of Glass and Ceramics, Vol. 2 No. 2, 2012, pp. 91-97. doi: 10.4236/njgc.2012.22013.


[1] E. Maruyama, “Amorphous Built-in-Field Effect Photoreceptors,” Japanese Journal of Applied Physics, Vol. 21, No. 2, 1982, pp. 213-223. doi:10.1143/JJAP.21.213
[2] D. C. Hunt, S. S .Kirby and J. A. Rowland, “X-Ray Imaging with Amorphous Selenium: X-Ray to Charge Conversion Gain and Avalanche Multiplication Gain,” Journal of Medical Physics, Vol. 9, No. 11, 2002, pp. 2459- 2464.
[3] S. O. Kasap, “Imaging Materials,” 1991.
[4] V. I. Mikla, Y. Nagy, V. V. Mikla and A. V. Mateleshko, “The Effect of Sb Alloying on the Electro Photographic Properties of Amorphous Selenium,” Materials Science and Engineering: B, Vol. 64, No. 1, 1999, pp. 1-8.
[5] N. Chaudhary, A. Kumar, “Dielectric Relaxation in Glassy Se100-xSbx,” Turkish Journal of Physics, Vol. 29, No. 3, 2005, pp.119-125.
[6] N. Sharma, S. P. Singh and S. Kumar. “Composition De- pendence of Density of States in a-Se100?xSnx Thin Films,” Pramana—Journal of Physics, Vol. 69, No. 4, 2007, pp.681-687.
[7] S. P. Singh, S. Kumar and A. Kumar, “Effect of Some Metallic Impurities on the Density of Localized States in a-Se80Te20 Thin Films,” Vacuum, Vol. 75, No. 4, 2004, pp. 313-320.
[8] M. Abkowitz, “Relaxation Induced Changes in Electrical Behaviour of Glassy Chalcogenide Semiconductors,” Po- lymer Engineering & Science, Vol. 24, No. 5, 1984, pp. 1145-1149.
[9] M. Kitao, K. Yoshii and S. Yamada, “Thermoelectric Power of Glassy Alloy As40Se60-xTex,” Physica Status Solidi (a), Vol. 91, No. 1, 1985, pp 271-177. doi:10.1002/pssa.2210910133
[10] A. B. Gadkari and J. K. Zope, “Electrical Properties of Amorphous Semiconducting Se-Te-In System,” Journal of Non-Crystalline Solids, Vol. 103, No. 2-3, 1988, pp. 295-299. doi:10.1016/0022-3093(88)90208-6
[11] N. F. Mott and E. A. Davis, “Conduction in Non-Crystalline Systems,” Philosoph-ical Magazine, Vol. 22, No. 179, 1970, pp. 903-922.
[12] S. Okano, M. Suzuuki, et al., “Impurity Effect of Some Metal on Electrical Properties of Amorphous As2Se1Te2 Films,” Journal of Non-Crystalline Solids, Vol. 59-60, No. 2, 1983, pp. 969-972.
[13] N. Musahwar, M. A. M. Khan, M. Husain adn M. Zulfequar, “Dielectric and Electrical Properties of Se-S Glassy Alloys,” Physica B, Vol. 396, No. 1-2, 2007, pp. 81-86.
[14] M. A. M. Khan, M. Zulfequar and M. Husain, “Estimation of the Density of Localized States of a-Se100-xBix Films from Electrical Properties,” Physica B: Condensed Matter, Vol. 322, No. 1-2, 2002, pp. 1-11. doi:10.1016/S0921-4526(01)00640-8
[15] S. B. Husain, M. Zulfequar, M. A. M. Khan and M. Husain, “Study of Density of Localized States in a- GaxSe100-x Alloys Using SCLC Meas-urements,” Current Applied Physics, Vol. 4, No. 5, 2004, pp. 445-451
[16] R. Singh, S. K .Tripathi and S. Kumar. “Role of Cu Additive in the Density of Localized States in a-Ge20Se80 Glassy Alloy,” Indian Journal of Pure and Applied Physics, Vol. 46, No. 1, 2008, pp. 40-48.
[17] V. S. Kushwaha and A. Kumar, “Space Charge Limited Conduction in Bulk Se100xSbx Chalcogenide Glasses,” Material Letters, Vol. 60, No. 17-18, 2006, pp. 2148- 2152. doi:10.1016/j.matlet.2005.12.090
[18] M. A. M. Khan, M. Zulfequar and M. Husain. “Study of Density of Localized States of a-Se80Te20-xPbx Films by Space Charge Limited Conduction Measurements,” Materials Letter, Vol. 57, No. 19, 2003, pp. 2894-2900. doi:10.1016/S0167-577X(02)01393-9

comments powered by Disqus

Copyright © 2019 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.