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Dopant Implantation into the Silicon Substrate with Non-Planar Surface

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DOI: 10.4236/epe.2010.22011    3,517 Downloads   5,976 Views   Citations

ABSTRACT

The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

G. Tarnavsky and E. Vorozhtsov, "Dopant Implantation into the Silicon Substrate with Non-Planar Surface," Energy and Power Engineering, Vol. 2 No. 2, 2010, pp. 73-77. doi: 10.4236/epe.2010.22011.

References

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