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Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor

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DOI: 10.4236/wjcmp.2012.21007    3,883 Downloads   7,981 Views  

ABSTRACT

We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor from the earlier reported temperature power law dependence result ?T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the dependence of scattering rate on the mean free path from the static screening result.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

P. Tripathi, S. Ashraf, S. Hasan and A. Sharma, "Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor," World Journal of Condensed Matter Physics, Vol. 2 No. 1, 2012, pp. 42-46. doi: 10.4236/wjcmp.2012.21007.

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