Author(s)

David Salazar¹, Roberto Soto-Molina¹, Eder German Lizarraga-Medina¹, Marco Antonio Felix², Nicola Radnev², Heriberto Márquez¹

¹Departamento de óptica, CICESE, Ensenada, México.
²Instituto de Ingeniería, Universidad Autónoma de Baja California, Mexicali, México.

This paper presents a study of amorphous SiO_x thin films by means of Variable Angle Spectroscopic Ellipsometry (VASE) technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain physical thickness and complex refractive index (n and k) from experimental data. In order to obtain a wide range to x stoichiometry values, the films were prepared by vacuum thermal evaporation of SiO on glass substrates, under different and controlled deposition conditions.

Ellipsometry, Refraction Index, SiOx Thin Films

Salazar, D. , Soto-Molina, R. , Lizarraga-Medina, E. , Felix, M. , Radnev, N. and Márquez, H. (2016) Ellipsometric Study of SiOx Thin Films by Thermal Evaporation. Open Journal of Inorganic Chemistry, 6, 175-182. doi: 10.4236/ojic.2016.63013.