Materials Sciences and Applications

Volume 6, Issue 6 (June 2015)

ISSN Print: 2153-117X   ISSN Online: 2153-1188

Google-based Impact Factor: 0.97  Citations  

Direct Structural Evidences of Epitaxial Growth Ge1-X MnX Nanocolumn Bi-Layers on Ge(001)

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DOI: 10.4236/msa.2015.66057    3,748 Downloads   4,556 Views  Citations
Author(s)

ABSTRACT

Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of thin films. Based on the observation of changes in RHEED patterns during nanocolumn growth, we used a real-time control approach to realize multilayer structures that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy (TEM) has been used to investigate the structural properties of the GeMn nanocolumns and GeMn/Ge nanocolumns bi-layers samples.

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Le, T. (2015) Direct Structural Evidences of Epitaxial Growth Ge1-X MnX Nanocolumn Bi-Layers on Ge(001). Materials Sciences and Applications, 6, 533-538. doi: 10.4236/msa.2015.66057.

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