The Effect of the MeV Si-Ion Irradiation on the Photoluminescence of Silicon Nanocrystals ()
ABSTRACT
Silicon nanocrystals embedded in silicon nitride films were irradiated with Si-ions at 8 MeV in order to modify their optical response. The samples were characterized by means of Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis, High-Resolution Transmission Electronic Microscopy and Photoluminescence analysis. It was found a blue-shift in the photoluminescence emission from the as-grown films after they were irradiated with high energetic silicon ions. According to the quantum confinement theory, this fact is related to a decrease in size of the silicon nanocrystals, which means that a higher silicon fluence irradiation is related with a diminishing in silicon nanocrystal size.
Share and Cite:
López-Suárez, A. (2013) The Effect of the MeV Si-Ion Irradiation on the Photoluminescence of Silicon Nanocrystals.
World Journal of Condensed Matter Physics,
3, 119-124. doi:
10.4236/wjcmp.2013.32019.