Author(s)

Sue Xu¹, Xiangbin Zeng^2*, Wenzhao Wang², Guangtong Zhou¹, Yishuo Hu², Shaoxiong Wu², Yang Zeng²

¹China-EU Institute for Clean and Renewable Energy, Huazhong University of Science & Technology, Wuhan, China.
²School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan, China.

Monolayer MoS₂ has excellent optoelectronic properties, which is a potential material for solar cell. Though MoS₂/c-Si heterojunction solar cell has been researched by many groups, little study of MoS₂/c-Si solar cell physics is reported. In this paper, MoS₂/c-Si heterojunction solar cells have been designed and optimized by AFORS-HET simulation program. The various factors affecting the performance of the cells were studied in details using TCO/n-type MoS₂/i-layer/p-type c-Si/BSF/Al structure. Due to the important role of intrinsic layer in HIT solar cell, the effect of different intrinsic layers including a-Si:H, nc-Si:H, a-SiGe:H, on the performance of TCO/n-type MoS₂/i-layer/p-type c-Si/Al cell, was studied in this paper. The results show that the TCO/n-type MoS₂/i-layer/p-type c-Si/Al cell has the highest efficiency with a-SiGe:H as intrinsic layer, efficiency up to 21.85%. The back surface field effects on the properties of solar cells were studied with p + μc-Si and Al as BSF layers. And the effect of various factors such as thickness and band gap of intrinsic layer, thickness of MoS₂, density of defect state and the energy band offset of MoS₂/c-Si interface of TCO/n-type MoS₂/i-layer nc-Si:H/p-type c-Si/Al cells, on the characteristics of solar cells, have been discussed for this kind of MoS₂ heterojunction cells. The optimal solar cell with structure of TCO/n-type MoS₂/i-type nc-Si:H/p-type c-Si/BSF/Al, has the best efficiency of 27.22%.

Intrinsic Material, Cell Efficiency, Molybdenum Disulfide

Xu, S. , Zeng, X. , Wang, W. , Zhou, G. , Hu, Y. , Wu, S. and Zeng, Y. (2017) Simulation and Optimization Characteristic of Novel MoS₂/c-Si HIT Solar Cell. Journal of Minerals and Materials Characterization and Engineering, 5, 323-338. doi: 10.4236/jmmce.2017.55027.