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Class-B Power Amplifier with Si-Based Double-Gate MOSFET: A Circuit Perspective
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Key Engineering Materials,
2022 |
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Design and performance analysis of SiO2-MOSFET based absorber for reflected RF signal
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Materials Today: Proceedings,
2022 |
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Design and analysis of MOSFET based absorber for 5G massive MIMO base station.
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2021 |
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[4]
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Third order band pass filter with double-gate MOSFET: A circuit perspective
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2021 |
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[5]
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Compact Noise Modeling Approach in Nano-scaled CSDG MOSFET for RF Switch
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2021 |
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[6]
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Third Order Band Pass Filter With Double-Gate MOSFET: A Simulation Perspective
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2021 |
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Fabrication of a novel RF switch device with high performance using Ino. 4Gao. 6As MOSFET technology
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半导体学报: 英文版,
2016 |
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[8]
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Fabrication of a novel RF switch device with high performance using In 0.4 Ga 0.6 As MOSFET technology
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半导体学报,
2016 |
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[9]
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Fabrication of a novel RF switch device with high performance using In0. 4Ga0. 6As MOSFET technologyProject supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).
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Journal of Semiconductors,
2016 |
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[10]
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Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch. Springer International Publishing,
2014 |
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[11]
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Explicit model of cylindrical surrounding double-gate MOSFETs
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WSEAS Trans. on Circuits and Systems,
2013 |
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[12]
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Explicit model of cylindrical surrounding double-gate MOSFET
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2013 |
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[13]
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Advancement of MOSFET with the application of hafnium
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Computer Communication and Informatics (ICCCI), 2012 International Conference on. IEEE, 2012.,
2012 |
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[14]
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Analysis of drain current and switching speed for SPDT switch and DPDT switch with the proposed DP4T RF CMOS switch
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Journal of Circuits, Systems, and Computers,
2012 |
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Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology
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Journal of computational electronics, Springer,
2011 |
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[16]
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Drain current and switching speed of the Double-Pole Four-Throw RF CMOS switch
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India Conference (INDICON), 2011 Annual IEEE. IEEE, 2011.,
2011 |
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An approach for the design of Cylindrical Surrounding Double-Gate MOSFET
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Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on. IEEE,
2011 |
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[18]
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Possibilities of HfO 2 for Double-Pole Four-Throw Double-Gate RF CMOS switch
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Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on. IEEE,
2011 |
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[19]
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Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch–A Review
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Wireless Sensor Network,
2011 |
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[20]
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Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch
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Int'l J. of Communications, Network and System Sciences,
2011 |
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[21]
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Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch-A Review
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Wireless Sensor Network,
2011 |
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[22]
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Possibilities of HfO2 for Double-Pole Four-Throw Double-Gate RF CMOS switch
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2011 |
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[23]
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Double-Pole Four-Throw RF CMOS switch design with double-gate transistors
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India Conference (INDICON), 2010 Annual IEEE. IEEE,
2010 |
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[24]
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Designing parameters for RF CMOS
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India Conference (INDICON), 2010 Annual IEEE. IEEE, 2010.,
2010 |
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