Author(s)

Jasper van Veen, Andres Castellanos- Gomez, Herre S. J. van der Zant, Gary A. Steele

Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.

We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for applications requiring a flexible graphene-based field effect transistor in where the graphene channel is not covered (such as biological or chemical sensors and photo-detectors).  

Graphene Device; Flexible Electronics; Back-Gate; Strain Engineering

J. Veen, A. Gomez, H. van der Zant and G. Steele, "Flexible Graphene Devices with an Embedded Back-Gate," Graphene, Vol. 2 No. 1, 2013, pp. 13-17. doi: 10.4236/graphene.2013.21003.