Optics and Photonics Journal
Volume 2, Issue 4 (December 2012)
ISSN Print: 2160-8881 ISSN Online: 2160-889X
Google-based Impact Factor: 0.76 Citations h5-index & Ranking
The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer ()
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ABSTRACT
The role of the carrier’s recombination velocity Si within the depletion Layer of p-n junction solar cell and the external bias voltage Va across the junction in determining the current density “J” through the cell is revealed. The unsteady carrier diffusion equation is solved under illumination conditions considering a source spectral function G(λ). The efficiency of the device as a function of Si , Va , G(λ) is obtained. Computations considering a silicon solar cell are given as an illustrative example.
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