Author(s)

Hiroyasu Yamahara, Munetoshi Seki, Hitoshi Tabata

Department of Bioengineering, Graduate School of Engineering, University of Tokyo, Tokyo, Japan.
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, Japan.

We report on the synthesis of gallium oxide nanowires by pulsed laser deposition using a gold catalyst. In the vapor-liquid-solid process, gold thickness was the crucial parameter for deciding the morphology of nanowires. In the case of 1 nm thick gold, homogeneous nanowire growth was confirmed at temperatures of 700°C to 850°C. Transmission electron microscopy and selected area electron diffraction measurements showed that the nanowires were polycrystalline. In the cathode luminescence spectra, UV, blue, green and red emission peaks were observed, as reported in previous studies. As growth temperature was increased, the relative intensities of blue, green, and red emissions decreased. Thermal annealing treatments were effective in decreasing the blue, green and red emission peaks, suggesting that these emission peaks were associated with oxygen vacancies.

Gallium Oxide; Nanowires; Pulsed Laser Deposition; Cathode Luminescence

H. Yamahara, M. Seki and H. Tabata, "Growth of Gallium Oxide Nanowires by Pulsed Laser Deposition," Journal of Crystallization Process and Technology, Vol. 2 No. 4, 2012, pp. 125-129. doi: 10.4236/jcpt.2012.24017.