Author(s)

Mohamed A. Baba^1,2*, Ala Gasim³, Abdelmoneim Mohamed Awadelgied⁴, Nafie Abdallatief Almuslet⁵, Ahmed Mohamed Salih¹

¹Department of Laser System, Institute of Laser, Sudan University of Science and Technology, Khartoum, Sudan.
²Institute of Frontier and Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China.
³Department of Physics, University of Science and Technology of China, Hefei, China.
⁴Department of General Science, Karrary University, Omdurman, Sudan.
⁵Almogran College of Science and Technology, Khartoum, Sudan.

In this work, the impact of the substrate annealing temperature on the thickness and roughness of La₂Ti₂O₇ thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited La₂Ti₂O₇ thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly; the maximum thickness was found (231 nm) when LTO thin film deposited at 500°C. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500°C). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.

La₂Ti₂O₇ Thin Films, PLD, Perovskites, Annealing Temperature

Baba, M. , Gasim, A. , Awadelgied, A. , Almuslet, N. and Salih, A. (2020) Influence of the Annealing Temperature on the Thickness and Roughness of La₂Ti₂O₇ Thin Films. Advances in Materials Physics and Chemistry, 10, 189-198. doi: 10.4236/ampc.2020.108014.