A New Approach for Heavy <i>N</i>-Doping Process in Ge Epilayers Using Specific Solid Source

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ISSN Print: 2160-8881
ISSN Online: 2160-889X
www.scirp.org/journal/opj
E-mail: opj@scirp.org

"A New Approach for Heavy N-Doping Process in Ge Epilayers Using Specific Solid Source"
written by Luong Thi Kim Phuong,
published by Optics and Photonics Journal, Vol.8 No.2, 2018

has been cited by the following article(s):

[1]	Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE
	Journal of Crystal …, 2022

[2]	Optical Properties of Sb Doped Ge Films Deposited on Silicon Substrate by Molecular Beam Epitaxy
	2018

[3]	The effect of carbon element on optical properties of n-doped Ge on silicon substrate
	2018

[1]	Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE Journal of Crystal Growth, 2022 DOI:10.1016/j.jcrysgro.2022.126668

[2]	Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE Journal of Crystal Growth, 2022 DOI:10.1016/j.jcrysgro.2022.126668

[3]	The effect of carbon element on optical properties of n-doped Ge on silicon substrate Modern Physics Letters B, 2018 DOI:10.1142/S021798491850224X

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