has been cited by the following article(s):
[1]
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Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer
Journal of Vacuum Science & Technology A,
2023
DOI:10.1116/6.0001913
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[2]
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Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer
Journal of Vacuum Science & Technology A,
2023
DOI:10.1116/6.0001913
|
|
|
[3]
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Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer
Journal of Vacuum Science & Technology A,
2023
DOI:10.1116/6.0001913
|
|
|
[4]
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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Scientific Reports,
2019
DOI:10.1038/s41598-019-46186-9
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[5]
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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Scientific Reports,
2019
DOI:10.1038/s41598-019-46186-9
|
|
|
[6]
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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Scientific Reports,
2019
DOI:10.1038/s41598-019-46186-9
|
|
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