RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source

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ISSN Print: 2160-8881
ISSN Online: 2160-889X
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"RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source"
written by Luong Thi Kim Phuong,
published by Optics and Photonics Journal, Vol.7 No.5, 2017

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[1]	Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source Japanese Journal of Applied Physics, 2023 DOI:10.35848/1347-4065/acc8de